NDS8839H Fairchild Semiconductor, NDS8839H Datasheet - Page 3

• Manufacturer Part Number: NDS8839H
• Description: Complementary Mosfet Half Bridge
• Manufacturer: Fairchild Semiconductor

Electrical Characteristics
Symbol
SWITCHING CHARACTERISTICS
t
t
t
t
Q
Q
Q
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
V
t
Notes:
1. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
D(on)
r
D(off)
f
S
rr
SD
g
gs
gd
design while R
P
Typical R
D
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
t
a. 50
b. 105
c. 125
Scale 1 : 1 on letter size paper
JA
1a
R
T
J
using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
J A
Parameter
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
T
o
A
CA
t
C/W when mounted on a 1 in
o
o
C/W when mounted on a 0.04 in
C/W when mounted on a 0.006 in
is determined by the user's board design.
R
J C
T
J
R
T
A
CA
t
I
2
D
t
2
pad of 2oz cpper.
R
DS ON
(Note 2)
(T
2
pad of 2oz cpper.
2
pad of 2oz cpper.
A
= 25°C unless otherwise noted)
T
J
1b
Conditions
N-Channel
V
V
P-Channel
V
V
N-Channel
V
I
P-Channel
V
I
V
V
N-Channel
V
P-Channel
V
D
D
DD
GEN
DD
GEN
DS
DS
GS
GS
GS
GS
= 4.0 A, V
= -4.0 A, V
= 10 V,
= -10 V,
= 10 V, I
= -10 V, I
= 0 V, I
= 0 V, I
= 0 V, I
= 0 V, I
= 10 V, R
= -10 V, R
F
F
S
S
= 2.0 A, dI
= -2.0 A, dI
D
= 2.0 A
= -2.0 A
D
GS
GS
GEN
= 1 A,
GEN
= -1 A,
= 10 V
= -10 V
= 6
= 6
(Note 2)
(Note 2)
F
F
/dt = 100 A/µs
/dt = 100 A/µs
1c
Type
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min
-0.85
Typ
2.1
3.1
5.2
5.1
0.9
12
13
20
29
40
10
19
19
21
9
Max
JC
-1.2
100
100
1.2
20
20
30
25
50
50
20
40
30
30
-2
is guaranteed by
2
NDS8839H Rev. A1
Units
nC
nC
nC
ns
ns
ns
ns
ns
A
V