HN29V1G91T-30 Renesas Electronics Corporation., HN29V1G91T-30 Datasheet - Page 91

• Manufacturer Part Number: HN29V1G91T-30
• Description: 128m X 8-bit Ag-and Flash Memory
• Manufacturer: Renesas Electronics Corporation.

Rev.
1.00
2.00
3.00
4.00
Date
Dec. 08, 2003
Dec. 19, 2003
Jun. 03, 2004
Jul. 20, 2004
Contents of Modification
Page

2
48
86

48

1, 51
8
86
51
Description
Deletion of Preliminary
Change of the description of Wear leveling
Tstg: 0°C/+70°C to −25°C/+125°C
Notes on usage: Change of 8.
V
Tstg: −25°C/+125°C to −25°C/+85°C
V
t
Program/Erase Characteristics
Notes on usage: Change of 8. Notes: 2., 4.
AC Characteristics
R
CC
CC
t
t
t
t
Change of description
t
t
Max (1st access time): 100µs to120µs
PROG
CPROG
CBSY
BERS
VRS
VRDY
: 2.7 V/3.6 V to 3.0 V/3.6 V
: 3.0 V/3.6 V to 2.7 V/3.6 V
“The address input is necessary for RA1 and RA2. Input 00h
“For RA3 and RA4, input 04h respectively.” to “For RA3, input 04h.”
“Before confirmation of this command, the protect operation is not
respectively.” to “The address input is necessary for RA1 and RA2 and
RA4. Input 00h respectively.”
guaranteed.” to “In case of this pause, the protect operation is not
guaranteed.”
Min: 20µs to 100µs
Max: 1000µs to 2400µs
Max: 2.4ms to 20ms
Max: 20µs to 100µs
Max: 1ms to 2.4ms
Max: 2ms to 4.8 ms