HN29V1G91T-30 Renesas Electronics Corporation., HN29V1G91T-30 Datasheet - Page 49

• Manufacturer Part Number: HN29V1G91T-30
• Description: 128m X 8-bit Ag-and Flash Memory
• Manufacturer: Renesas Electronics Corporation.

HN29V1G91T-30
DC Characteristics
(V
Parameter
Operating V
Operating V
(Read)
Operating V
(Program)
Operating V
(Erase)
Standby current (TTL)
Standby current (CMOS)
Deep Standby current (CMOS)
Input Leakage Current
Output Leakage Current
Input voltage
Input voltage
(4-5, 92, PRE)
Output High voltage Level
Output Low voltage Level
Output Low Current (R/*)
Rev.4.00, Jun.20.2004, page 49 of 89
CC
= 2.7 V to 3.6 V, Ta = 0 to +70°C)
CC
CC
CC
CC
voltage
current
current
current
Symbol Min
V
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
V
V
I
CC1
CC2
CC3
CC4
CC5
CC6
SB1
SB2
SB3
Li
Lo
OL
CC
iH
iL
iHD
iLD
oH
OL
(R/*) 5
2.7











2.0
−0.3
V
0.2
−0.2
2.4

CC
−
Typ Max
3.3 3.6
10
15
10
20
10
15

10









8
20
30
20
30
20
30
1
50
5
±10
±10
V
0.8
V
+0.2

0.4

CC
CC
+ 0.3 V
+ 0.2 V
Unit Test conditions
V
mA t
mA t
mA Single Bank Operation
mA Multi Bank Operation
mA Single Bank Operation
mA Multi Bank Operation
mA +- = V
µA
µA
µA
µA
V
V
V
V
mA V
92 = V
PRE = V
4-5 = V
+- = V
92 = V
PRE = V
4-5 = V
4-5 = V
92 = V
PRE = V
V
V
I
I
RC
RC
OH
OL
in
in
OL
= 2.1 mA
= 50 ns, +- = V
= 35 ns, +- = V
= 0 to 3.6 V
= 0 to 3.6 V
= −400 µA
= 0.4 V
iH
CC
SS
SS
SS
SS
CC
SS
CC
SS
SS
− 0.2 V,
± 0.2 V / V
± 0.2 V / V
± 0.2 V / V
± 0.2 V / V
± 0.2 V / V
± 0.2 V,
± 0.2 V/ V
± 0.2 V
± 0.2 V
iL
iL
, Iout = 0 mA
, Iout = 0 mA
CC
CC
CC
CC
CC
CC
± 0.2 V
± 0.2 V
± 0.2 V
± 0.2 V
± 0.2 V
± 0.2 V