HN29V1G91T-30 Renesas Electronics Corporation., HN29V1G91T-30 Datasheet - Page 17

• Manufacturer Part Number: HN29V1G91T-30
• Description: 128m X 8-bit Ag-and Flash Memory
• Manufacturer: Renesas Electronics Corporation.

HN29V1G91T-30
Multi Bank Page Program
It is possible to program the data to any one page address in each bank simultaneously since this device
adopts 4 bank structure. The bank to be programmed the data is chosen from 1 bank to maximum 4 bank.
Address and data for next bank can be input consecutively by writing 11h command (dummy command)
after writing 80h command with column and page address, data as well as usual page program.
Program operation to several banks specified automatically are executed simultaneously by writing 10h
command (program start command) after data input to the maximum 4 bank completes.
Rev.4.00, Jun.20.2004, page 17 of 89
Memory array
Data register
R/*
R/*
I/O
I/O
(A)
(B)
80h
80h
column J
Program
CA1 CA2 RA1 RA2
CA1 CA2 RA1 RA2
column J
column L
Bank 0
(1)
(5)
Page N
page N
page Q
(1)
(3)
Bank0
Bank2
column K
D
D
IN
IN
Program
Bank 1
D
D
(2)
IN
IN
Page P
(5)
11h
11h
t
t
DBSY
DBSY
80h
80h
CA1 CA2 RA1 RA2
CA1 CA2 RA1 RA2
column M
column K
Program
column L
Bank 2
(3)
Page Q
(5)
page R
page P
(2)
(4)
Bank1
Bank3
D
D
column M
IN
IN
Program
D
D
IN
IN
Bank 3
Page R
(4)
(5)
11h
10h
t
t
DBSY
PROG
71h
(A)
(B)
status
out