HN29V1G91T-30 Renesas Electronics Corporation., HN29V1G91T-30 Datasheet - Page 16

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HN29V1G91T-30

Manufacturer Part Number
HN29V1G91T-30
Description
128m X 8-bit Ag-and Flash Memory
Manufacturer
Renesas Electronics Corporation.
Datasheet

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HN29V1G91T-30
Page Program Random Data input in a Page
This operation enables to input the program data in the Page address randomly writing 85h command with
two column address input on the way to the program operation in the Page program mode.
It can input the data by specifying a column address in the same page which you want to program the data
using this mode.
After completion of the data input, program it to the specified column address is executed automatically by
writing 10h command (Program start command). Program operation must be executed to a Page address
which the data is erased.
A number of additional program in the same Page address is maximum 8 times.
The data of 1 byte or more need to be input when it is in random data input.
Rev.4.00, Jun.20.2004, page 16 of 89
CLE
+-
9-
ALE
4-
I/O
R/*
80h
Memory array
Data register
CA1
Column
address L
CA2 RA1 RA2
Page
address N
Program
L
D
IN
D
M
IN
D
IN
Page N
85h
Column
address M
CA1 CA2
D
IN
D
IN
D
IN
10h
t
PROG
70h status

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