HN29V1G91T-30 Renesas Electronics Corporation., HN29V1G91T-30 Datasheet - Page 50
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HN29V1G91T-30
Manufacturer Part Number
HN29V1G91T-30
Description
128m X 8-bit Ag-and Flash Memory
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.HN29V1G91T-30.pdf
(92 pages)
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Manufacturer
Quantity
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Company:
Part Number:
HN29V1G91T-30
Manufacturer:
HYNIX
Quantity:
10
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HN29V1G91T-30
AC Characteristics
(V
Test Conditions
• Input pulse levels: 0.4 to 2.4 V
• Input rise and fall time: 3 ns
• Input and output timing levels: 1.5 V / 1.5 V
• Output load: 1TTL GATE and 50 pF (3.0 V ± 10%)
AC Timing Characteristics for Command / Address / Data Input
Parameter
CLE Setup Time
CLE Hold Time
+- Setup Time
+- Hold Time
9- Pulse Width
ALE Setup Time
ALE Hold Time
Data Setup Time
Data Hold Time
Write cycle Time
9- High Hole Time
+- High to 9- low setup time
9- High to +- low hold time
+- High to 4- low setup time
4- High to +- low hold time
Note:
Rev.4.00, Jun.20.2004, page 50 of 89
CC
= 2.7 V to 3.6 V, Ta = 0 to +70°C)
1. If t
CS
is set less than 5 ns, t
1TTL GATE and 100 pF (3.3 V ± 10%)
Symbol Min
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
CLS
CLH
CS
CH
WP
ALS
ALH
DS
DH
WC
WH
CHWS
WHCH
CHRS
RHCH
WP
must be minimum 20 ns. Otherwise, t
0
9
0
6
15
0
6
9
9
33
12
5
5
5
5
Typ
Max
WP
is minimum 15 ns.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
1
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