SUD50N03-16P Vishay, SUD50N03-16P Datasheet

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SUD50N03-16P

Manufacturer Part Number
SUD50N03-16P
Description
N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUD50N03-16P
Manufacturer:
VISHAY
Quantity:
12 500
Notes
a.
Document Number: 72634
S-40466—Rev. A, 15-Mar-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction to Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Ordering Information: SUD50N03-16P—E3 (Lead Free)
V
Surface Mounted on FR4 Board, t v 10 sec.
DS
30
30
(V)
G
Top View
TO-252
D
S
a
0.024 @ V
0.016 @ V
a
a
Drain Connected to Tab
r
DS(on)
Parameter
Parameter
GS
GS
(W)
N-Channel 30-V (D-S) MOSFET
= 4.5 V
= 10 V
a
A
= 25_C UNLESS OTHERWISE NOTED)
I
D
New Product
15
12
(A)
Steady State
T
L = 0 1 mH
L = 0.1 mH
T
T
t v 10 sec
T
T
A
C
A
C
A
a
= 100_C
= 25_C
= 25_C
= 25_C
= 25_C
G
N-Channel MOSFET
D
S
Symbol
Symbol
T
R
R
R
V
V
J
E
I
I
P
P
, T
DM
thJC
I
I
AS
thJA
DS
GS
AS
D
S
D
D
FEATURES
D TrenchFETr Power MOSFET
D PWM Optimized
D 100% Rg
APPLICATIONS
D High-Side DC/DC
D DDR DC/DC Converter
stg
− Desktop
− Server
Typical
Tested
3.0
18
40
−55 to 175
Limit
SUD50N03-16P
31.25
"20
10.6
40.8
6.5
30
37
15
40
25
Vishay Siliconix
5
a
Maximum
3.7
23
50
www.vishay.com
Unit
Unit
_C/W
mJ
C/W
_C
W
W
V
V
A
A
1

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SUD50N03-16P Summary of contents

Page 1

... TO-252 Drain Connected to Tab Top View Ordering Information: SUD50N03-16P—E3 (Lead Free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Single Pulse Avalanche Energy ...

Page 2

... SUD50N03-16P Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance Drain Source On State Resistance b Forward Transconductance a Dynamic ...

Page 3

... Document Number: 72634 S-40466—Rev. A, 15-Mar-04 New Product 0. −55_C C 0.04 25_C 0.03 125_C 0.02 0.01 0. 100 100 125 150 175 SUD50N03-16P Vishay Siliconix On-Resistance vs. Drain Current − Drain Current (A) D Gate Charge ...

Page 4

... SUD50N03-16P Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature 100 T − Ambient Temperature (_C Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 −4 − Duty Cycle = 0.5 1 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 −4 − www.vishay.com 4 New Product 100 10 1 0.1 0.01 125 150 ...

Page 5

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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