HY27LF081G2M Hynix Semiconductor, HY27LF081G2M Datasheet - Page 46

• Manufacturer Part Number: HY27LF081G2M
• Description: 1gbit 128mx8bit / 64mx16bit Nand Flash Memory
• Manufacturer: Hynix Semiconductor

Rev 0.7 / Apr. 2005
MARKING INFORMATION
- Y: Year ( ex : 5 = year 2005, 0 6 = y ear 2006)
- w w : W ork W eek ( ex : 1 2= w ork w eek 12)
- x x : Process Code
N ot e
- Cap it a l Let t er
- Sm all L et t er
- h y n ix
- K OR
- HY2 7 x F x x1 G2 Mx x x x
HY: HYN IX
F: Classificat ion
1G: Densit y
2 : Mode
M : Version
x: Package Type
x: Package M at erial
x: Operat ing T em perat ure
x: Bad Block
27 : NAND Flash
x: Power Supply
x x : Bit O rganization
Pack ag
FBGA
H
x
Y
x
2
x
: F(63 FBGA)
: Blank(Norm al) , P(Lead Free)
: C ( 0- ~ 7 0- ), E( -2 5- ~ 8 5- )
: B( I ncluded Bad Block) , S(1~ 5 Bad Block) ,
: H ynix Sym bol
: O rigin Cou n try
: Par t Num ber
: U( 2 .7V~ 3.6V), L( 2 .7V) , S(1 .8V)
: Single Level Cell+ Sin gle D ie+ Large Block
: 0 8 (x8) , 1 6 (x16 )
: 1 Gbit
: 1nCE & 1R/ nB; Sequent ial Row Read D isable )
: 1 st Generat ion
P(All Good Block )
M ( -30- ~ 8 5- ) , I ( -40- ~ 8 5- )
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
: Fixed I t em
: N on-fixed I t em
7
x
M ar k i n g Exam p le
x
F
x
HY27UF(08/16)1G2M Series
HY27SF(08/16)1G2M Series
Y
x
W
1
W
G
K
Preliminary
O
2
x
R
M
x
46