HY27LF081G2M Hynix Semiconductor, HY27LF081G2M Datasheet - Page 45

• Manufacturer Part Number: HY27LF081G2M
• Description: 1gbit 128mx8bit / 64mx16bit Nand Flash Memory
• Manufacturer: Hynix Semiconductor

Rev 0.7 / Apr. 2005
MARKING INFORMATION
- h yn ix
- K OR
- H Y2 7 xFxx1G 2 M x x x x
- Y : Year ( ex: 5 = year 2005, 0 6 = y ear 2 0 06 )
- w w : W ork W eek ( ex: 1 2= w ork w eek 1 2)
- x x : Process Code
N ot e
- Cap i t a l Let t e r
- Sm al l Let t e r
H Y: HYN IX
M : Version
2 7 : NAND Flash
x : Pow er Supply
F: Classif icat ion
x x : Bit O rgan izat ion
1G: Den sit y
2 : M ode
x : Package T ype
x : Package M at erial
x : Opera ting T em pera tu re
x : Bad Block
Pack ag
TSOP1
W SOP
/
H
x
Y
x
2
x
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
: H yn ix Sym bol
: O rigin Cou n try
: P ar t N um ber
: U( 2.7V~ 3.6V) , L(2.7V) , S(1 .8V)
: Sin gle Level Cell+ Sin gle D ie + Large Block
: 0 8 ( x8 ), 1 6 ( x16)
: 1 Gbit
: 1 nCE & 1R/ n B; Sequ en t ial Row Read D isable
: 1 st G en eration
: T (48-TSOP1 ), V( 4 8 -W SOP)
: Blank( Norm al) , P( Lead Free)
: C ( 0- ~ 7 0- ) , E( -25- ~ 8 5- )
: B (I nclu ded Bad Block) , S(1 ~ 5 Bad Block) ,
: F ixed I t em
: N on -fixed I t em
7
x
M (-30- ~ 8 5- ) , I ( -40- ~ 8 5- )
P(All Good Block)
M ar k i n g Ex am p l e
x
F
x
HY27UF(08/16)1G2M Series
HY27SF(08/16)1G2M Series
Y
x
W
1
W
K
G
Preliminary
O
2
x
M
R
x
45