KST5550 Fairchild Semiconductor, KST5550 Datasheet

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KST5550

Manufacturer Part Number
KST5550
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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Manufacturer
Quantity
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KST5550MFT
Manufacturer:
STANLEY
Quantity:
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Part Number:
KST5550MTF
Manufacturer:
FAIRCHILD
Quantity:
38 262
©2002 Fairchild Semiconductor Corporation
High Voltage Transistor
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Electrical Characteristics
V
V
V
I
P
T
BV
BV
BV
I
I
h
V
V
f
C
C
CBO
EBO
T
Symbol
FE
STG
CBO
CEO
EBO
C
CE
BE
ob
CBO
CEO
EBO
Symbol
(sat)
(sat)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Parameter
T
a
=25 C unless otherwise noted
T
Parameter
a
=25 C unless otherwise noted
Marking
KST5550
1 F
I
I
V
I
I
I
V
V
V
V
I
I
I
f=100MHz
V
C
C
E
C
C
C
C
C
CB
EB
CE
CE
CE
CB
=10 A, I
=10 A, I
=1mA, I
=10mA, I
=50mA, I
=10mA, I
=50mA, I
=10mA, V
=4V, I
=100V, I
=5V, I
=5V, I
=5V, I
=10V, I
Test Condition
C
B
C
C
C
C
E
=0
=0
=1.0mA
=10mA
=50mA
B
B
B
B
E
=0
=0
CE
E
=1mA
=5mA
=1mA
=5mA
=0, f=1.0MHz
=0
=10V
1. Base 2. Emitter 3. Collector
3
Value
160
140
600
350
150
6
Min.
160
140
100
60
60
20
6
1
Max.
0.15
0.25
SOT-23
100
250
300
1.0
1.2
6.0
50
Rev. A2, November 2002
2
Units
mW
mA
V
V
V
C
Units
MHz
nA
nA
pF
V
V
V
V
V
V
V

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KST5550 Summary of contents

Page 1

... DC Current Gain FE V (sat) Collector-Emitter Saturation Voltage CE V (sat) Base-Emitter Saturation Voltage BE f Current Gain Bandwidth Product T C Output Capacitance ob ©2002 Fairchild Semiconductor Corporation KST5550 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I = =1mA ...

Page 2

... Figure 1. DC current Gain 1000 100 10 1 0.0 0.2 0.4 0.6 V [V], BASE-EMITTER VOLTAGE BE Figure 3. Base-Emitter On Voltage 1000 100 [mA], COLLECTOR CURRENT C Figure 5. Current Gain Bandwidth Product ©2002 Fairchild Semiconductor Corporation 0.1 0.01 1 100 1000 Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 0.1 0.8 1.0 1.2 1 Figure 4 ...

Page 3

... Package Dimensions 0.40 0.03 2.90 0.95 0.03 1.90 ©2001 Fairchild Semiconductor Corporation SOT-23 0.40 0.03 0.96~1.14 0.10 0.95 0.03 0.508REF 0.03 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters Rev. A2, November 2002 ...

Page 4

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...

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