RHRD660S9A_F085 Fairchild Semiconductor, RHRD660S9A_F085 Datasheet
RHRD660S9A_F085
Manufacturer Part Number
RHRD660S9A_F085
Description
The RHRD660S9A_F085 is hyperfast diodes with soft recovery characteristics (t rr 30ns)
Manufacturer
Fairchild Semiconductor
Datasheet
1.RHRD660S9A_F085.pdf
(5 pages)
©2011 Fairchild Semiconductor Corporation
6A, 600V Hyperfast Diodes
The RHRD660S9A_F085 is hyperfast diodes with
soft recovery characteristics (t
recovery time of ultrafast diodes and are silicon nitride
passivated ion-implanted epitaxial planar construction.
This device is intended for use as freewheeling/
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Its low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
Formerly developmental type TA49057.
Ordering Information
Symbol
Absolute Maximum Ratings
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Lead Temperature for Soldering
RHRD660S9A_F085
PART NUMBER
(T
(Square Wave, 20kHz)
(Halfwave, 1 Phase, 60Hz)
(Leads at 0.063 in. (1.6mm) from case for 10s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, see Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
C
= 152
o
C)
PACKAGE
TO-252
K
A
rr
< 30ns). It has half the
T
C
Data Sheet
= 25
o
C, Unless Otherwise Specified
RHR660
BRAND
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <30ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175
• Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
July 2011
CATHODE
JEDEC STYLE TO-252
STG
RHRD660S9A_F085
ANODE
F(AV)
RWM
RRM
FRM
FSM
PKG
AVL
, T
R
D
L
J
RHRD660S9A_F085
-65 to 175
CATHODE
(FLANGE)
600
600
600
300
260
12
60
50
10
6
RHRD660S9A_F085
UNITS
mJ
o
o
o
W
V
V
V
A
A
A
C
C
C
o
C
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RHRD660S9A_F085 Summary of contents
Page 1
... Data Sheet 6A, 600V Hyperfast Diodes The RHRD660S9A_F085 is hyperfast diodes with < 30ns). It has half the soft recovery characteristics (t rr recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling/ clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications ...
Page 2
... TYP MAX - 2.1 - 1.7 - 100 - 500 - 8 through 25 (See Figure 9 175 C 100 o 100 0 100 200 300 400 V , REVERSE VOLTAGE (V) R FIGURE 2. REVERSE CURRENT vs REVERSE UNITS V V µ A µ C/W 500 600 RHRD660S9A_F085 ...
Page 3
... 0 FORWARD CURRENT (A) F FIGURE AND t CURVES vs FORWARD CURRENT SQ. WAVE 140 145 150 155 160 T , CASE TEMPERATURE ( C FIGURE 6. CURRENT DERATING CURVE 150 200 6 DC 165 170 175 o C) RHRD660S9A_F085 ...
Page 4
... FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT ©2011 Fairchild Semiconductor Corporation DUT CURRENT SENSE + FIGURE 11. AVALANCHE CURRENT AND VOLTAGE FIGURE 9. t WAVEFORMS AND DEFINITIONS rr V AVL WAVEFORMS 0. RHRD660S9A_F085 ...
Page 5
... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower™ FPS™ Auto-SPM™ F-PFS™ ® AX-CAP™* FRFET ® BitSiC Global Power Resource Build it Now™ ...