CM1000E4C-66R Powerex Inc, CM1000E4C-66R Datasheet - Page 7

• Manufacturer Part Number: CM1000E4C-66R
• Manufacturer: Powerex Inc
• Type: IGBT Moduler

Specifications of CM1000E4C-66R

• Prx Availability: RequestQuote
• Voltage: 3300V
• Current: 1000A
• Circuit Configuration: Chopper, Buck, Boost
• Rohs Compliant: No

4
PERFORMANCE CURVES
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
th
-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
7
6
5
4
3
2
1
0
0.01
100
HALF-BRIDGE SWITCHING ENERGY
0.1
10
0
1
HALF-BRIDGE SWITCHING TIME
100
CHARACTERISTICS (TYPICAL)
V
V
Tj = 125°C, Inductive load
CHARACTERISTICS (TYPICAL)
CC
GE
= ±15V, L
= 1800V, I
V
R
L
Inductive load
S
CC
G(on)
tr
= 150nH, Tj = 125°C
tf
= 1800V, V
= 2.4Ω, R
S
5
C
= 150nH
= 1000A
Gate resistor [Ohm]
Collector Current [A]
GE
G(off)
= ±15V
= 8.4Ω
1000
10
Erec
Eon
15
td(on)
td(off)
10000
Eoff
20
7
6
5
4
3
2
1
0
0.01
100
HALF-BRIDGE SWITCHING ENERGY
0.1
10
0
1
HALF-BRIDGE SWITCHING TIME
100
CHARACTERISTICS (TYPICAL)
V
V
Tj = 150°C, Inductive load
CHARACTERISTICS (TYPICAL)
CC
GE
= ±15V, L
= 1800V, I
V
R
L
Inductive load
S
CC
G(on)
tr
tf
= 150nH, Tj = 150°C
= 1800V, V
= 2.4Ω, R
S
5
C
= 150nH
= 1000A
Gate resistor [Ohm]
Collector Current [A]
GE
G(off)
= ±15V
CM1000E4C-66R
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
= 8.4Ω
1000
10
Erec
Eon
HVM-1055-A
15
INSULATED TYPE
td(off)
td(on)
10000
Eoff
7 of 9
20