CM1000E4C-66R Powerex Inc, CM1000E4C-66R Datasheet - Page 5

• Manufacturer Part Number: CM1000E4C-66R
• Manufacturer: Powerex Inc
• Type: IGBT Moduler

Specifications of CM1000E4C-66R

• Prx Availability: RequestQuote
• Voltage: 3300V
• Current: 1000A
• Circuit Configuration: Chopper, Buck, Boost
• Rohs Compliant: No

4
PERFORMANCE CURVES
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
COLLECTOR-EMITTER SATURATION VOLTAGE
th
-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
2000
1600
1200
2000
1600
1200
800
400
800
400
0
0
CHARACTERISTICS (TYPICAL)
OUTPUT CHARACTERISTICS
0
0
Collector-Emitter Saturation Voltage [V]
Tj = 150°C
V
Collector - Emitter Voltage [V]
GE
1
= 15V
1
(TYPICAL)
Tj = 25°C
V
V
V
2
GE
GE
GE
= 19V
= 15V
= 13V
2
3
3
4
Tj = 150°C
4
5
Tj = 125°C
V
V
GE
GE
= 11V
= 9V
6
5
2000
1600
1200
2000
1600
1200
800
400
800
400
0
FREE-WHEEL DIODE FORWARD
TRANSFER CHARACTERISTICS
0
CHARACTERISTICS (TYPICAL)
0
0
V
CE
= V
2
CM1000E4C-66R
Tj = 125°C
Emitter-Collector Voltage [V]
Tj = 25°C
Gate - Emitter Voltage [V]
GE
1
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
(TYPICAL)
4
Tj = 150°C
2
6
HVM-1055-A
3
8
INSULATED TYPE
Tj = 150°C
10
4
Tj = 25°C
12
5 of 9
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