CM1000E4C-66R Powerex Inc, CM1000E4C-66R Datasheet - Page 6

• Manufacturer Part Number: CM1000E4C-66R
• Manufacturer: Powerex Inc
• Type: IGBT Moduler

Specifications of CM1000E4C-66R

• Prx Availability: RequestQuote
• Voltage: 3300V
• Current: 1000A
• Circuit Configuration: Chopper, Buck, Boost
• Rohs Compliant: No

4
PERFORMANCE CURVES
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
th
-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
1000
7
6
5
4
3
2
1
0
HALF-BRIDGE SWITCHING ENERGY
100
CAPACITANCE CHARACTERISTICS
0
10
1
CHARACTERISTICS (TYPICAL)
V
R
L
Inductive load
0.1
S
CC
G(on)
= 150nH, Tj = 125°C
= 1800V, V
= 2.4Ω, R
400
V
f = 100kHz
GE
Collector-Emitter Voltage [V]
= 0V, Tj = 25°C
Collector Current [A]
GE
G(off)
= ±15V
(TYPICAL)
= 8.4Ω
800
1
1200
10
1600
Coes
Cies
Cres
2000
Erec
Eon
Eoff
100
-10
-15
7
6
5
4
3
2
1
0
20
15
10
HALF-BRIDGE SWITCHING ENERGY
GATE CHARGE CHARACTERISTICS
-5
5
0
0
0
CHARACTERISTICS (TYPICAL)
V
R
L
Inductive load
S
CC
G(on)
= 150nH, Tj = 150°C
V
Tj = 25°C
= 1800V, V
CE
= 2.4Ω, R
400
= 1800V, I
Collector Current [A]
GE
4
G(off)
= ±15V
(TYPICAL)
C
Gate Charge [µC]
= 1500A
= 8.4Ω
800
CM1000E4C-66R
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
8
1200
HVM-1055-A
INSULATED TYPE
1600
12
Erec
2000
Eon
Eoff
6 of 9
16