CM1000E4C-66R Powerex Inc, CM1000E4C-66R Datasheet
CM1000E4C-66R
Specifications of CM1000E4C-66R
Related parts for CM1000E4C-66R
CM1000E4C-66R Summary of contents
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... APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES MITSUBISHI HVIGBT MODULES CM1000E4C-66R HIGH POWER SWITCHING USE INSULATED TYPE ● I ……………………… ...
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... L = 150 125° Inductive load T = 150° 25°C j (Note 125° 150°C j MITSUBISHI HVIGBT MODULES CM1000E4C-66R HIGH POWER SWITCHING USE INSULATED TYPE Ratings Unit 3300 V 3200 ± 1000 A 3000 A 1000 A 3000 A 10400 W 6000 V ...
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... T = 125°C (Note 150° 25°C j (Note 125°C (Note 150°C j MITSUBISHI HVIGBT MODULES CM1000E4C-66R HIGH POWER SWITCHING USE INSULATED TYPE Limits Unit Min Typ Max — 2.70 — µs — 2.80 3.30 — 2.85 3.30 — 0.30 — µs — ...
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... T = 25°C, Anode to Cathode 25° does not exceed T j rating (150°C). jmax x 0. according to IEC 60747. rec MITSUBISHI HVIGBT MODULES CM1000E4C-66R HIGH POWER SWITCHING USE INSULATED TYPE Limits Unit Min Typ Max — — 12.0 K/kW — — 22.5 K/kW — — ...
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... FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 2000 1600 1200 Tj = 125° 150°C 800 400 MITSUBISHI HVIGBT MODULES CM1000E4C-66R HIGH POWER SWITCHING USE INSULATED TYPE (TYPICAL 150° 25° Gate - Emitter Voltage [ 125° 25° ...
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... Cres -10 -15 10 100 HALF-BRIDGE SWITCHING ENERGY 7 Eon Eoff 3 2 Erec 1 0 1600 2000 0 MITSUBISHI HVIGBT MODULES CM1000E4C-66R HIGH POWER SWITCHING USE INSULATED TYPE (TYPICAL 1800V 1500A 25° Gate Charge [µC] CHARACTERISTICS (TYPICAL 1800V ±15V 2.4Ω 8.4Ω ...
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... Tj = 150°C, Inductive load Eoff HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 100 10 td(off) td(on) 1 0.1 0.01 10000 100 MITSUBISHI HVIGBT MODULES CM1000E4C-66R HIGH POWER SWITCHING USE INSULATED TYPE = 1800V 1000A C = ±15V 150nH S Eon Erec Gate resistor [Ohm 1800V ±15V 2.4Ω 8.4Ω ...
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... − [K/kW τ [sec MITSUBISHI HVIGBT MODULES CM1000E4C-66R HIGH POWER SWITCHING USE INSULATED TYPE = 1800V ±15V 2.4Ω 150nH G(on) S Irr trr 1000 10000 Emitter Current [A] ⎧ ⎫ ⎛ ⎞ t ⎜ ⎟ n ⎪ ⎪ ...
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... Emitter-Collector Voltage [V] HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES SAFE OPERATING AREA (SCSOA 3000 4000 0 3000 4000 MITSUBISHI HVIGBT MODULES CM1000E4C-66R HIGH POWER SWITCHING USE INSULATED TYPE SHORT CIRCUIT V ≤ 2500V ±15V 2.4Ω 8.4Ω G(on) G(off 150°C ...