CM1000E4C-66R Powerex Inc, CM1000E4C-66R Datasheet - Page 3

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CM1000E4C-66R

Manufacturer Part Number
CM1000E4C-66R
Description
Manufacturer
Powerex Inc
Type
IGBT Moduler
Datasheet

Specifications of CM1000E4C-66R

Prx Availability
RequestQuote
Voltage
3300V
Current
1000A
Circuit Configuration
Chopper, Buck, Boost
Rohs Compliant
No
4
t
t
E
E
V
t
I
Q
E
E
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
d(off)
f
rr
rr
th
off(10%)
off
EC
rec(10%)
rec
rr
Symbol
-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Turn-off delay time
Turn-off fall time
Turn-off switching energy
Turn-off switching energy
Emitter-collector voltage
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Reverse recovery energy
Reverse recovery energy
Item
(Note 5)
(Note 6)
(Note 2)
(Note 2)
(Note 2)
(Note 5)
(Note 6)
(Note 2)
(Note 2)
(Note 2)
V
I
V
R
L
Inductive load
I
V
V
I
V
R
L
Inductive load
C
E
C
s
s
CC
GE
G(off)
GE
CC
GE
G(on)
= 1000 A
= 1000 A
= 1000 A
= 150 nH
= 150 nH
= 1800 V
= ±15 V
= 0 V
= 1800 V
= ±15 V
= 8.4 Ω
= 2.4 Ω
(Note 4)
Conditions
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
j
= 25°C
= 125°C
= 150°C
= 25°C
= 125°C
= 150°C
= 25°C
= 125°C
= 150°C
= 25°C
= 125°C
= 150°C
= 25°C
= 125°C
= 150°C
= 25°C
= 125°C
= 150°C
= 25°C
= 125°C
= 150°C
= 25°C
= 125°C
= 150°C
= 25°C
= 125°C
= 150°C
= 25°C
= 125°C
= 150°C
CM1000E4C-66R
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
Min
Limits
1000
1050
1150
1350
2.70
2.80
2.85
0.30
0.35
0.40
1.35
1.65
1.70
1.50
1.80
1.90
2.15
2.30
2.25
0.50
0.70
0.80
0.70
1.20
1.35
0.80
1.35
1.55
Typ
850
700
HVM-1055-A
INSULATED TYPE
3.30
3.30
1.00
1.00
2.80
Max
3 of 9
Unit
J/P
J/P
J/P
J/P
µC
µs
µs
µs
V
A

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