ST72361AR9-Auto STMicroelectronics, ST72361AR9-Auto Datasheet - Page 238

• Manufacturer Part Number: ST72361AR9-Auto
• Description: 8-bit MCU for automotive with K Flash, 10-bit ADC, 5 Timers, SPI, 2x LINSCI
• Manufacturer: STMicroelectronics

Specifications of ST72361AR9-Auto

• Hdflash Endurance: 100 cycles, data retention 20 years at 55 °C
• 5 Power Saving Modes: halt, auto wake up from halt, active halt, wait and slow

Electrical characteristics
19.8
19.8.1
238/279
Table 100. Dual voltage HDFlash memory (continued)
1. Data based on characterization results, not tested in production.
2. V
3. Data based on simulation results, not tested in production.
4. In Write / erase mode the I
EMC characteristics
Susceptibility tests are performed on a sample basis during product characterization.
Functional EMS (electromagnetic susceptibility)
Based on a simple running application on the product (toggling two LEDs through I/O ports),
the product is stressed by two electromagnetic events until a failure occurs (indicated by the
LEDs).
●
●
A device reset allows normal operations to be resumed. The test results are given in the
table below based on the EMS levels and classes defined in application note AN1709.
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations:
The software flowchart must include the management of runaway conditions such as:
●
●
●
Prequalification trials:
Symbol
T
T
ERASE
N
t
PROG
reasons.
RET
RW
PP
ESD: Electro-Static Discharge (positive and negative) is applied on all pins of the
device until a functional disturbance occurs. This test conforms with the IEC 1000-4-2
standard.
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to V
V
conforms with the IEC 1000-4-4 standard.
Corrupted program counter
Unexpected reset
Critical data corruption (control registers...)
SS
must be applied only during the programming or erasing operation and not permanently for reliability
through a 100pF capacitor, until a functional disturbance occurs. This test
Data retention
Write erase cycles
Programming or erasing
temperature range
Parameter
DD
supply current consumption is the same as in Run mode (see
Doc ID 12468 Rev 3
T
T
A
A
= 55°C
= 85°C
Conditions
Min
100
-40
20
(1)
Typ
25
ST72361xx-Auto
Section
Max
85
(1)
DD
20.2.2)
and
cycles
years
Unit
°C