ST72324J2 STMicroelectronics, ST72324J2 Datasheet - Page 133

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ST72324J2

Manufacturer Part Number
ST72324J2
Description
8-BIT MCU WITH NESTED INTERRUPTS, FLASH, 10-BIT ADC, 4 TIMERS, SPI, SCI INTERFACE
Manufacturer
STMicroelectronics
Datasheet

Specifications of ST72324J2

Hdflash Endurance
100 cycles, data retention
Clock Sources
crystal/ceramic resonator oscillators, internal RC oscillator, clock security system and bypass for external clock
Four Power Saving Modes
Halt, Active-Halt, Wait and Slow
Main Clock Controller With
Real time base, Beep and Clock-out capabilities
16-bit Timer A With
1 input capture, 1 output compare, external clock input, PWM and pulse generator modes
16-bit Timer B With
2 input captures, 2 output compares, PWM and pulse generator modes
12.9 I/O PORT PIN CHARACTERISTICS
12.9.1 General Characteristics
Subject to general operating conditions for V
Notes:
1. Data based on characterization results, not tested in production.
2. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested.
3. When the current limitation is not possible, the V
tion. A positive injection is induced by V
on page 117
4. Configuration not recommended, all unused pins must be kept at a fixed voltage: using the output mode of the I/O for
example and leaving the I/O unconnected on the board or an external pull-up or pull-down resistor (see
based on design simulation and/or technology characteristics, not tested in production.
5. The R
scribed in
6. To generate an external interrupt, a minimum pulse width has to be applied on an I/O port pin configured as an external
interrupt source.
Figure 69. Unused I/O Pins configured as input
ΣI
I
Symbol
INJ(PIN)
t
t
INJ(PIN)
Note: I/O can be left unconnected if it is configured as output
(0 or 1) by the software. This has the advantage of
t
greater EMC robustness and lower cost.
f(IO)out
r(IO)out
w(IT)in
V
R
C
V
V
I
lkg
I
hys
PU
S
IH
IO
IL
3)
PU
3)
Figure
Input low level voltage (standard voltage
devices)
Input high level voltage
Schmitt trigger voltage hysteresis
Injected Current on Flash device pin PB0
Injected Current on other I/O pins
Total injected current (sum of all I/O and
control pins)
Input leakage current
Static current consumption induced by each
floating input pin
Weak pull-up equivalent resistor
I/O pin capacitance
Output high to low level fall time
Output low to high level rise time
External interrupt pulse time
pull-up equivalent resistor is based on a resistive transistor (corresponding I
for more details.
70).
1)
V
DD
10kΩ
10kΩ
Parameter
UNUSED I/O PORT
UNUSED I/O PORT
1)
IN
6)
>V
ST7XXX
ST7XXX
DD
1)
5)
1)
2)
while a negative injection is induced by V
IN
DD
maximum must be respected, otherwise refer to I
, f
OSC
V
V
Floating input mode
V
C
Between 10% and
90%
DD
SS
IN
L
=50pF
=
, and T
=5V
Conditions
V
Figure 70. Typical I
SS
V
IN
V
A
V
DD
unless otherwise specified.
DD
9 0
8 0
7 0
6 0
5 0
4 0
3 0
2 0
1 0
=5V
0
2
4)
2 .5
0.7xV
T a = 1 4 0 ° C
T a = 9 5 ° C
T a = 2 5 ° C
T a = -4 5 ° C
3
Min
50
0
1
PU
3 .5
DD
ST72324Jx ST72324Kx
IN
V d d (V )
vs. V
<V
PU
4
SS
Typ
current characteristics de-
200
120
0.7
4 .5
25
25
5
. Refer to
DD
5
with V
5 .5
0.3xV
INJ(PIN)
Figure
Max
±25
250
+4
±4
±1
Section 12.2.2
6
IN
DD
=V
specifica-
69). Data
133/164
SS
Unit
t
mA
CPU
kΩ
µA
pF
ns
V
V
1

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