STM8L162M8 STMicroelectronics, STM8L162M8 Datasheet - Page 114
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STM8L162M8
Manufacturer Part Number
STM8L162M8
Description
STM8L-Ultra Low Power-8 bits Microcontrollers
Manufacturer
STMicroelectronics
Datasheet
1.STM8L162R8.pdf
(121 pages)
Specifications of STM8L162M8
Operating Power Supply
1.65 to 3.6 V (without BOR), 1.8 to 3.6 V (with BOR)
Temperature Range
− 40 to 85 or 125 °C
5 Low Power Modes
Wait, Low power run, Low power wait, Active-halt with RTC, Halt
Ultralow Leakage Per I/0
50 nA
Fast Wakeup From Halt
5 μs
Max Freq
16 MHz, 16 CISC MIPS peak
Lcd
8x40 or 4x44 w/ step-up converter
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STM8L162M8T6
Manufacturer:
STMicroelectronics
Quantity:
200
Company:
Part Number:
STM8L162M8T6TR
Manufacturer:
STMicroelectronics
Quantity:
10 000
Electrical parameters
114/121
Table 57.
1. Not tested in production.
Absolute maximum ratings (electrical sensitivity)
Based on two different tests (ESD and LU) using specific measurement methods, the
product is stressed in order to determine its performance in terms of electrical sensitivity.
For more details, refer to the application note AN1181.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). Two models
can be simulated: human body model and charge device model. This test conforms to the
JESD22-A114A/A115A standard.
Table 58.
1. Data based on characterization results, not tested in production.
Static latch-up
●
Table 59.
V
V
Symbol
Symbol
ESD(HBM)
ESD(CDM)
S
EMI
LU: 3 complementary static tests are required on 10 parts to assess the latch-up
performance. A supply overvoltage (applied to each power supply pin) and a current
injection (applied to each input, output and configurable I/O pin) are performed on each
sample. This test conforms to the EIA/JESD 78 IC latch-up standard. For more details,
refer to the application note AN1181.
Symbol
LU
Peak level
EMI data
ESD absolute maximum ratings
Electrical sensitivities
Electrostatic discharge voltage
(human body model)
Electrostatic discharge voltage
(charge device model)
Parameter
Static latch-up class
(1)
Ratings
V
T
LQFP80
conforming to
IEC61967-2
A
DD
+25 °C,
3.6 V,
Conditions
Doc ID 17959 Rev 2
Parameter
0.1 MHz to 30 MHz
30 MHz to 130 MHz
130 MHz to 1 GHz
SAE EMI Level
frequency band
Monitored
Conditions
T
A
+25 °C
STM8L162R8, STM8L162M8
Max vs.
16 MHz
Maximum
value
1.5
10
4
2000
1
Class
750
II
(1)
dBV
Unit
Unit
V
-