STM32F417IE STMicroelectronics, STM32F417IE Datasheet - Page 78

• Manufacturer Part Number: STM32F417IE
• Description: High-performance and DSP with FPU, ARM Cortex-M4 MCU with 512 Kbytes Flash, 168 MHz CPU, Art Accelerator, Ethernet, HW crypto
• Manufacturer: STMicroelectronics

Specifications of STM32F417IE

• Core: ARM 32-bit Cortex™-M4 CPU with FPU, Adaptive real-time accelerator (ART Accelerator™) allowing 0-wait state execution from Flash memory, frequency up to 168 MHz, memory protection unit, 210 DMIPS/1.25 DMIPS/MHz (Dhrystone 2.1), and DSP instructions
• 3×12-bit, 2.4 Msps A/d Converters: up to 24 channels and 7.2 MSPS in triple interleaved mode
• General-purpose Dma: 16-stream DMA controller with FIFOs and burst support
• Up To 17 Timers: up to twelve 16-bit and two 32-bit timers up to 168 MHz, each with up to 4 IC/OC/PWM or pulse counter and quadrature (incremental) encoder input
• 10/100 Ethernet Mac With Dedicated Dma: supports IEEE 1588v2 hardware, MII/RMII
• Cryptographic Acceleration: hardware acceleration for AES 128, 192, 256, Triple DES, HASH (MD5, SHA-1), and HMAC
• Rtc: subsecond accuracy, hardware calendar

Electrical characteristics
Table 22.
1. TBD stands for “to be defined”.
2. Based on characterization, not tested in production.
Figure 25. Typical V
78/168
I
Symbol
DD_VBAT
Backup
domain supply
current
Parameter
3.5
2.5
1.5
0.5
3
2
1
0
Typical and maximum current consumptions in V
0
10
Backup SRAM ON, low-speed
oscillator and RTC ON
Backup SRAM OFF, low-speed
oscillator and RTC ON
Backup SRAM ON, RTC OFF
Backup SRAM OFF, RTC OFF
BAT
20
current consumption (LSE and RTC ON/backup RAM OFF)
Conditions
30
40
Doc ID 022063 Rev 2
50
V
1.8 V
1.29
0.62
0.79
0.10
60
BAT
=
T
A
V
2.4 V
70
= 25 °C
1.42
0.73
0.81
0.10
Typ
BAT
BAT
=
V
80
3.3 V
mode
1.68
0.96
0.86
0.10
BAT
STM32F415xx, STM32F417xx
=
(1)
90
T
A
TBD
TBD
= 85 °C
9
5
(2)
(2)
V
BAT
(2)
(2)
Temperature in (°C)
100
Max
= 3.6 V
105 °C
TBD
TBD
16
T
7
A
(2)
(2)
1.65V
1.8V
2V
2.4V
2.7V
3V
3.3V
3.6V
=
(2)
(2)
Unit
µA