BF1210 NXP Semiconductors, BF1210 Datasheet - Page 7

• Manufacturer Part Number: BF1210
• Description: Two dual-gate MOS Field-Effect Transistors with shared source and gate2 pins
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BF1210_1
Product data sheet
Fig 4. Amplifier A: gate1 current as a function of
Fig 6. Amplifier A: drain current as a function of gate1
(mA)
( A)
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V
I
G1
I
D
100
80
60
40
20
20
16
12
0
8
4
0
V
gate1 voltage; typical values
V
current; typical values
0
0
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
DS(A)
DS(A)
= 4.0 V.
= 3.5 V.
= 3.0 V.
= 2.5 V.
= 2.0 V.
= 1.5 V.
= 1.0 V.
= 5 V; T
= 5 V; V
0.5
j
G2-S
= 25 C.
20
= 4 V; T
1.0
j
= 25 C.
40
1.5
I
G1
V
G1-S
001aaf478
001aaf480
( A)
(V)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
Rev. 01 — 25 October 2006
2.0
60
Fig 5. Amplifier A: forward transfer admittance as a
Fig 7. Amplifier A: drain current as a function of gate1
(mS)
(mA)
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
(7) V
Y
I
D
fs
36
24
12
20
15
10
0
5
0
V
function of drain current; typical values
V
supply voltage (V
0
0
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
G2-S
DS(A)
DS(A)
(7)
= 4.0 V.
= 3.5 V.
= 3.0 V.
= 2.5 V.
= 2.0 V.
= 1.5 V.
= 1.0 V.
= 5 V; T
= 5 V; V
1
(6)
Dual N-channel dual gate MOSFET
j
G2-S
12
= 25 C.
2
= 4 V; R
GG
(5)
); typical values
G1(A)
3
24
(4)
= 59 k ; T
I
© NXP B.V. 2006. All rights reserved.
D
4
(3)
(mA)
V
001aaf479
001aaf481
BF1210
GG
(2)
(1)
(V)
j
= 25 C.
36
5
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