BF1210 NXP Semiconductors, BF1210 Datasheet - Page 14

• Manufacturer Part Number: BF1210
• Description: Two dual-gate MOS Field-Effect Transistors with shared source and gate2 pins
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BF1210_1
Product data sheet
Fig 23. Amplifier B: drain current as a function of V
(mA)
(1) R
(2) R
(3) R
(4) R
(5) R
(6) R
(7) R
I
D
25
20
15
10
5
0
V
and V
0
G2-S
G1(B)
G1(B)
G1(B)
G1(B)
G1(B)
G1(B)
G1(B)
= 5 V; R
= 68 k .
= 82 k .
= 100 k .
= 120 k .
= 150 k .
= 180 k .
= 220 k .
GG
; typical values
1
G1(B)
2
connected to V
3
GG
V
GG
; T
4
001aaf497
j
= V
= 25 C.
DS
(1)
(2)
(3)
(4)
(5)
(6)
(7)
Rev. 01 — 25 October 2006
(V)
5
DS
Fig 24. Amplifier B: drain current as a function of gate2
(mA)
(1) V
(2) V
(3) V
(4) V
(5) V
I
D
16
12
8
4
0
R
voltage; typical values
0
GG
GG
GG
GG
GG
G1(B)
= 5.0 V.
= 4.5 V.
= 4.0 V.
= 3.5 V.
= 3.0 V.
= 150 k ; T
1
Dual N-channel dual gate MOSFET
j
2
= 25 C.
(1)
(2)
(3)
(4)
(5)
3
© NXP B.V. 2006. All rights reserved.
4
V
001aaf498
BF1210
G2-S
(V)
5
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