BF1210 NXP Semiconductors, BF1210 Datasheet
BF1210
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BF1210 Summary of contents
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... Rev. 01 — 25 October 2006 1. Product profile 1.1 General description The BF1210 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges ...
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... B - [2] - amplifi 400 MHz - amplifi 800 MHz - input level for AGC amplifier A 100 amplifier B 100 - Simplified outline BF1210 Typ Max Unit - 180 2.2 2.7 pF 1.9 2 ...
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... Dual N-channel dual gate MOSFET Description * = p : made in Hong Kong * = t : made in Malaysia * = w : made in China Conditions Min Max - [1] T 107 C - 180 sp 65 +150 - 150 001aac193 100 150 200 T (˚C) sp © NXP B.V. 2006. All rights reserved. BF1210 Unit ...
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... S- 0.5 S- 100 A 0 100 A 0 G1( 150 k 9 G1( DS( DS( Min 26 [1] - [1] - [1] - [1] - BF1210 Typ Unit 240 Typ Max ...
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... AGC AGC AGC AGC Rev. 01 — 25 October 2006 Dual N-channel dual gate MOSFET Min [ 100 BF1210 Typ Max Unit 0.9 1.5 dB 1.2 1 ...
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... V (V) G1-S (1) V G1-S(A) (2) V G1-S(A) (3) V G1-S(A) (4) V G1-S(A) (5) V G1-S(A) (6) V G1-S(A) (7) V G1-S(A) (8) V G1-S(A) (9) V G1-S(A) V G2-S Fig 3. Amplifier A: output characteristics; typical values Rev. 01 — 25 October 2006 BF1210 Dual N-channel dual gate MOSFET 001aaf477 (1) (2) (3) (4) (5) (6) (7) ( ...
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... V. G2-S = 1.5 V. G2-S = 1 DS(A) j function of drain current; typical values DS(A) G2-S G1(A) supply voltage (V ); typical values GG BF1210 001aaf479 (1) (2) ( (mA) D 001aaf481 ( © NXP B.V. 2006. All rights reserved ...
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... Rev. 01 — 25 October 2006 Dual N-channel dual gate MOSFET (connected G1(A) voltage; typical values BF1210 001aaf483 (1) (2) (3) (4) ( (V) G2 © NXP B.V. 2006. All rights reserved ...
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... MHz MHz; G1(A) w unw mA see D(nom)(A) amb cross modulation as a function of gain reduction; typical values 001aaf486 40 50 gain reduction (dB mA see D(nom)(A) amb © NXP B.V. 2006. All rights reserved. BF1210 001aaf485 40 50 Figure 32. Figure 32 ...
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... DS( mA. D(A) phase as a function of frequency; typical values (MHz DS(A) G2-S DS( mA. D(A) frequency; typical values BF1210 001aaf488 (deg 001aaf490 3 10 © NXP B.V. 2006. All rights reserved ...
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... Min 28 [1] - [1] - [1] - [1] - [ BF1210 Angle (deg) 1.19 2.85 5.69 8.51 11.33 14.13 16.87 19.61 22.35 25.03 27.08 (ratio) n Typ Max Unit 1.9 2 0.9 1 ...
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... Rev. 01 — 25 October 2006 Dual N-channel dual gate MOSFET Min Typ [ 100 103 001aaf492 1.6 V. G1-S(B) = 1.5 V. G1-S(B) = 1.4 V. G1-S(B) = 1.3 V. G1-S(B) = 1.2 V. G1-S(B) = 1.1 V. G1-S(B) = 1.0 V. G1-S( G2-S j © NXP B.V. 2006. All rights reserved. BF1210 Max Unit - (1) (2) (3) (4) (5) (6) ( ...
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... V. G2 DS(B) j function of drain current; typical values 150 k ; DS(B) G2-S G1( supply voltage (V ); typical values GG BF1210 001aaf494 (1) (2) ( (mA) D 001aaf496 (V) GG © NXP B.V. 2006. All rights reserved ...
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... Fig 24. Amplifier B: drain current as a function of gate2 DS Rev. 01 — 25 October 2006 Dual N-channel dual gate MOSFET 16 (1) I (2) D (3) ( 150 G1(B) j voltage; typical values BF1210 001aaf498 (V) G2-S © NXP B.V. 2006. All rights reserved ...
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... G1( mA MHz; f D(nom)(B) w unw see Figure 32. amb cross modulation as a function of gain reduction; typical values 001aaf501 40 50 gain reduction (dB see Figure amb © NXP B.V. 2006. All rights reserved. BF1210 001aaf500 150 MHz; 32 ...
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... DS( mA. D(B) phase as a function of frequency; typical values (MHz DS(B) G2-S DS( mA. D(B) frequency; typical values BF1210 001aaf503 (deg 001aaf505 3 10 © NXP B.V. 2006. All rights reserved ...
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... Dual N-channel dual gate MOSFET = 25 C; typical values. amb Angle Magnitude (deg) (ratio) 89.27 0.992 90.81 0.9900 89.67 0.9897 89.02 0.9889 88.43 0.9881 87.64 0.9870 87.53 0.9851 87.51 0.9838 87.7 0.9825 88.14 0.9803 88.26 0.9789 r (ratio) n (deg) 20.27 0.65 42.08 0.581 DUT C4 4 001aad926 BF1210 Angle (deg) 1.26 2.91 5.81 8.7 11.61 14.52 17.39 20.3 23.2 26.06 29.03 © NXP B.V. 2006. All rights reserved ...
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... 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2.0 REFERENCES JEDEC JEITA SC-88 Rev. 01 — 25 October 2006 Dual N-channel dual gate MOSFET detail 0.45 0.25 0.2 0.2 0.1 0.15 0.15 EUROPEAN PROJECTION BF1210 SOT363 ISSUE DATE 04-11-08 06-03-16 © NXP B.V. 2006. All rights reserved ...
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... Description Automatic Gain Control Direct Current Metal-Oxide-Semiconductor Field-Effect Transistor Ultra High Frequency Very High Frequency Data sheet status Product data sheet Rev. 01 — 25 October 2006 BF1210 Dual N-channel dual gate MOSFET Change notice Supersedes - - © NXP B.V. 2006. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 25 October 2006 BF1210 Dual N-channel dual gate MOSFET © NXP B.V. 2006. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2006. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BF1210 All rights reserved. Date of release: 25 October 2006 Document identifier: BF1210_1 ...