BF1210 NXP Semiconductors, BF1210 Datasheet - Page 10

• Manufacturer Part Number: BF1210
• Description: Two dual-gate MOS Field-Effect Transistors with shared source and gate2 pins
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BF1210_1
Product data sheet
Fig 13. Amplifier A: input admittance as a function of
Fig 15. Amplifier A: reverse transfer admittance and
b
(mS)
is
( S)
Y
, g
10
10
rs
10
10
10
10
10
is
1
1
2
1
2
3
2
V
I
frequency; typical values
V
I
phase as a function of frequency; typical values
10
D(A)
10
D(A)
DS(A)
DS(A)
= 19 mA.
= 19 mA.
= 5 V; V
= 5 V; V
G2-S
G2-S
= 4 V; V
= 4 V; V
10
10
2
2
b
g
Y
is
is
DS(B)
DS(B)
rs
rs
f (MHz)
f (MHz)
= 0 V;
= 0 V;
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Rev. 01 — 25 October 2006
10
10
3
3
10
(deg)
10
10
1
3
rs
2
Fig 14. Amplifier A: forward transfer admittance and
Fig 16. Amplifier A: output admittance as a function of
b
os
(mS)
(mS)
Y
, g
10
10
fs
10
10
10
os
-1
-2
1
1
2
V
I
phase as a function of frequency; typical values
V
I
frequency; typical values
10
10
D(A)
D(A)
DS(A)
DS(A)
= 19 mA.
= 19 mA.
= 5 V; V
= 5 V; V
Dual N-channel dual gate MOSFET
G2-S
G2-S
= 4 V; V
= 4 V; V
10
10
2
2
b
g
Y
DS(B)
os
os
DS(B)
fs
fs
f (MHz)
f (MHz)
= 0 V;
= 0 V;
© NXP B.V. 2006. All rights reserved.
001aaf488
001aaf490
BF1210
10
10
3
3
10
(deg)
10
1
10 of 21
2
fs