BF1208 NXP Semiconductors, BF1208 Datasheet - Page 9

• Manufacturer Part Number: BF1208
• Description: Two dual-gate MOS Field-Effect Transistors with shared source and gate2 pins plus an integrated switch
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BF1208
Product data sheet
Fig 12. Amplifier A: drain current as a function of gain
Fig 14. Amplifier A: forward transfer admittance and
(mA)
(mS)
|y
I
D
fs
10
28
20
12
|
10
4
1
2
10
0
V
T
reduction; typical values
V
I
phase as a function of frequency; typical
values
D(A)
amb
DS(A)
DS(A)
= 19 mA
= 25 C; see
= V
= 5 V; V
10
DS(B)
G2-S
= 5 V; V
20
Figure
= 4 V; V
10
G1-S(B)
2
|y
ϕ
33.
30
fs
fs
DS(B)
|
= 0 V; f = 50 MHz;
f (MHz)
= V
gain reduction (dB)
40
All information provided in this document is subject to legal disclaimers.
G1-S(B)
001aac197
001aac567
= 0 V;
Rev. 2 — 7 September 2011
10
50
3
−10
−10
−1
(deg)
ϕ
2
fs
Fig 13. Amplifier A: input admittance as a function of
Fig 15. Amplifier A: reverse transfer admittance and
b
(mS)
(μS)
is
|y
10
10
, g
rs
10
10
10
10
|
10
−1
−2
is
1
1
2
3
2
10
10
V
I
frequency; typical values
V
I
phase as a function of frequency; typical
values
D(A)
D(A)
DS(A)
DS(A)
= 19 mA
= 19 mA
= 5 V; V
= 5 V; V
Dual N-channel dual gate MOSFET
G2-S
G2-S
= 4 V; V
= 4 V; V
10
10
b
g
2
2
is
is
|y
ϕ
rs
rs
DS(B)
DS(B)
|
f (MHz)
f (MHz)
= V
= V
© NXP B.V. 2011. All rights reserved.
G1-S(B)
G1-S(B)
001aac566
001aac568
BF1208
= 0 V;
= 0 V;
10
10
3
3
−10
−10
−10
−1
(deg)
ϕ
rs
9 of 23
3
2