BF1208 NXP Semiconductors, BF1208 Datasheet
BF1208
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BF1208 Summary of contents
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... Rev. 2 — 7 September 2011 1. Product profile 1.1 General description The BF1208 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1 bias of amplifier B. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during Automatic Gain Control (AGC) ...
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... Rev. 2 — 7 September 2011 Dual N-channel dual gate MOSFET Min Typ - - 109 C [ 100 100 - Simplified outline Symbol G1A G1B BF1208 Max Unit - 180 2.2 2.7 pF 2.0 2 1.3 1.9 dB 1.4 2.1 dB 105 - dB ...
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... Dual N-channel dual gate MOSFET Marking code 2L Conditions Min Max - 10 - 10 - 109 C [ 180 sp 65 +150 - 150 001aac193 100 150 200 T (˚C) sp © NXP B.V. 2011. All rights reserved. BF1208 Version SOT666 Unit C ...
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... G1-S(A) amplifier G1-S( G2-S G1-S( G1-S(A) DS(A) DS(B) Figure 3). Figure 3). All information provided in this document is subject to legal disclaimers. Rev. 2 — 7 September 2011 BF1208 Dual N-channel dual gate MOSFET Typ 225 Min Typ 0 100 A 0 100 A 0 150 k ...
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... G1B 001aac205 amplifier A is off; amplifier amplifier A is on; amplifier B is off. GG Functional diagram Min 0 BF1208 Typ Max Unit 2.2 2 ...
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... G1-S(A) ( 1.6 V. G1-S(A) ( 1.5 V. G1-S(A) ( 1.4 V. G1-S(A) ( 1.3 V. G1-S(A) ( 1.2 V. G1-S(A) ( 1.1 V. G1-S(A) ( G1-S( G2-S G1-S(B) DS(B) Amplifier A: output characteristics; typical values BF1208 Typ Max Unit - - dB dB dBV 105 - dBV 001aaa555 (1) (2) (3) (4) (5) (6) (7) ( C. j © NXP B.V. 2011. All rights reserved. ...
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... I D( DS(A) G2-S DS( internal G1 current = current in pin drain (B) if D(B) MOSFET (B) is switched off. Amplifier A: drain current as a function of internal G1 current; typical values © NXP B.V. 2011. All rights reserved. BF1208 001aac206 60 (μ G1-S( ...
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... Amplifier A: drain current as a function of gate2 voltage; typical values 0 gain (dB MHz; see DS(A) DS(B) G1-S(B) Figure 33. AGC voltage; typical values BF1208 001aaa559 (1) (2) (3) (4) (5) ( (V) G2-S 001aac196 (V) AGC © NXP B.V. 2011. All rights reserved ...
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... DS(A) G2-S DS( D(A) phase as a function of frequency; typical values BF1208 001aac566 (MHz G1-S(B) 001aac568 −10 3 ϕ rs (deg) −10 2 −10 − (MHz G1-S(B) © NXP B.V. 2011. All rights reserved ...
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... G1-S(B) amb (deg) 16.06 37.59 BF1208 C; typical values Magnitude Angle (ratio) (deg) 1.41 0.992 2.81 0.991 5.57 0.990 8.34 0.989 11.08 0.986 13.78 0.983 16.45 0.980 ...
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... All information provided in this document is subject to legal disclaimers. Rev. 2 — 7 September 2011 Dual N-channel dual gate MOSFET Min 0 [ MHz 100 BF1208 Typ Max Unit 2.0 2 ...
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... Dual N-channel dual gate MOSFET (mA ( 1.6 V. G1-S(B) ( 1.5 V. G1-S(B) ( 1.4 V. G1-S(B) ( 1.3 V. G1-S(B) ( 1.2 V. G1-S(B) ( 1.1 V. G1-S( (7) V G1-S( G2-S DS(A) G1-S(A) values BF1208 001aaa569 (1) (2) (3) (4) (5) ( C. j © NXP B.V. 2011. All rights reserved ...
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... D (mA DS(B) G2-S DS( 150 k (connected Figure 3. gate1 supply voltage; typical values BF1208 001aaa571 (1) (2) (3) ( (mA C. j 001aaa573 ( G1-S(A) ); see GG © NXP B.V. 2011. All rights reserved. ...
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... Dual N-channel dual gate MOSFET DS(B) DS(A) G1-S( 150 k (connected see G1 GG gate2 voltage; typical values BF1208 001aaa575 (1) (2) (3) (4) (5) 6 (V) G2 C; j Figure 3. © NXP B.V. 2011. All rights reserved ...
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... DS(B) GG DS( 150 k (connected C; see T Figure 34. amb reduction; typical values BF1208 001aac198 G1-S( MHz Figure 34. 001aac200 40 50 gain reduction (dB G1-S( MHz; GG © NXP B.V. 2011. All rights reserved. ...
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... DS(B) G2-S DS( D(B) frequency; typical values BF1208 001aac571 −10 2 ϕ fs (deg) −10 − (MHz G1-S(A) 001aac573 (MHz G1-S(A) © NXP B.V. 2011. All rights reserved ...
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... G1-S(A) amb (deg) 13.11 32.77 BF1208 C; typical values. Angle (deg) 1.60 3.16 6.31 9.40 12.46 15.57 18.62 21.70 24.76 27.81 30.86 C; typical values; r () n 0.694 0.674 © ...
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... Ω All information provided in this document is subject to legal disclaimers. Rev. 2 — 7 September 2011 BF1208 Dual N-channel dual gate MOSFET V DS( 2.2 μH 4 Ω BF1208 DB L2 2.2 μH 4 DS(B) 5V 001aac201 V DS( 2.2 μ 4 2.2 μH 50 Ω ...
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... E 1.3 1.7 0.3 1.0 0.5 1.1 1.5 0.1 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 2 — 7 September 2011 Dual N-channel dual gate MOSFET detail 0.1 0.1 EUROPEAN PROJECTION © NXP B.V. 2011. All rights reserved. BF1208 SOT666 ISSUE DATE 04-11-08 06-03- ...
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... NXP Semiconductors 11. Revision history Table 14. Revision history Document ID Release date BF1208 v.2 20110907 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...
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... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 2 — 7 September 2011 BF1208 Dual N-channel dual gate MOSFET © NXP B.V. 2011. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 7 September 2011 BF1208 Dual N-channel dual gate MOSFET © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BF1208 All rights reserved. Date of release: 7 September 2011 Document identifier: BF1208 ...