BF1208 NXP Semiconductors, BF1208 Datasheet - Page 5

• Manufacturer Part Number: BF1208
• Description: Two dual-gate MOS Field-Effect Transistors with shared source and gate2 pins plus an integrated switch
• Manufacturer: NXP Semiconductors

NXP Semiconductors
8. Dynamic characteristics
Table 8.
Common source; T
BF1208
Product data sheet
Symbol
y
C
C
C
C
G
NF
Fig 2.
fs
iss(G1)
iss(G2)
oss
rss
tr

(mA)
I
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
D
20
16
12
8
4
0
0
Drain currents of MOSFET A and B as a
function of gate1 supply voltage
D(B)
D(B)
D(B)
D(A)
D(A)
D(A)
Parameter
forward transfer admittance
input capacitance at gate1
input capacitance at gate2
output capacitance
reverse transfer capacitance
power gain
noise figure
Dynamic characteristics for amplifier A
; R
; R
; R
; R
; R
; R
(6)
G1
G1
G1
G1
G1
G1
8.1 Dynamic characteristics for amplifier A
1
amb
= 120 k.
= 150 k.
= 180 k.
= 180 k.
= 150 k.
= 120 k.
(4)
= 25
(5)
2

C; V
G2-S
3
= 4 V; V
Conditions
T
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 1 MHz
B
f = 11 MHz; G
f = 400 MHz; Y
f = 800 MHz; Y
All information provided in this document is subject to legal disclaimers.
4
001aaa552
j
V
S
(1)
(2)
(3)
f = 200 MHz; G
f = 400 MHz; G
f = 800 MHz; G
= 25 C
GG
= B
DS
(V)
= 5 V; I
S(opt)
Rev. 2 — 7 September 2011
5
; B
[1]
D
S
L
S
S
= 20 mS; B
= B
= 19 mA; unless otherwise specified.
= Y
= Y
S
S
S
L(opt)
= 2 mS; G
= 2 mS; G
= 3.3 mS; G
S(opt)
S(opt)
Fig 3.
S
= 0 S
L
L
V
V
Functional diagram
= 0.5 mS
= 1 mS
L
GG
GG
= 1 mS
= 5 V: amplifier A is off; amplifier B is on.
= 0 V: amplifier A is on; amplifier B is off.
G1A
G1B
G2
R
G1
Dual N-channel dual gate MOSFET
V
GG
-
-
32
Min
26
-
-
28
23
-
-
-
001aac205
Typ
31
0.9
20
36
32
27
3.0
1.3
1.4
2.2
3.0
© NXP B.V. 2011. All rights reserved.
DA
S
DB
BF1208
Max Unit
41
2.7
-
-
-
40
36
32
-
1.9
2.1
mS
pF
pF
pF
fF
dB
dB
dB
dB
dB
dB
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