BF1208 NXP Semiconductors, BF1208 Datasheet - Page 8

• Manufacturer Part Number: BF1208
• Description: Two dual-gate MOS Field-Effect Transistors with shared source and gate2 pins plus an integrated switch
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BF1208
Product data sheet
Fig 8.
Fig 10. Amplifier A: unwanted voltage for 1 %
(dBμV)
(mA)
V
I
unw
D
120
110
100
20
16
12
90
80
8
4
0
0
V
Amplifier A: drain current of amplifier A as a
function of supply voltage of A and B
amplifier; typical values
0
V
f
cross-modulation as a function of gain
reduction; typical values
R
unw
DS(A)
G1
DS(A)
= 60 MHz; T
= 150 k (connected to ground); see
= V
= V
10
1
DS(B)
DS(B)
= V
= 5 V; V
amb
20
2
supply
= 25 C; see
G1-S(B)
; V
G2-S
30
3
= 0 V; f
= 4 V; T
gain reduction (dB)
Figure
40
All information provided in this document is subject to legal disclaimers.
4
001aaa558
001aac195
w
V
sup
j
= 50 MHz;
= 25 C;
33.
Figure
(V)
Rev. 2 — 7 September 2011
50
5
3.
Fig 9.
Fig 11. Amplifier A: gain reduction as a function of
reduction
(mA)
gain
(dB)
I
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
D
32
24
16
10
20
30
40
50
8
0
0
0
0
V
T
Amplifier A: drain current as a function of
gate2 voltage; typical values
V
Figure
AGC voltage; typical values
j
DS(B)
DS(B)
DS(B)
DS(B)
DS(B)
DS(B)
DS(A)
DS(A)
= 25 C.
= 5 V.
= 4.5 V.
= 4 V.
= 3.5 V.
= 3 V.
= 2.5 V.
= 5 V; V
= V
33.
DS(B)
1
Dual N-channel dual gate MOSFET
G1-S(B)
2
= 5 V; V
= 0 V; gate1 (A) = open;
2
G1-S(B)
4
= 0 V; f = 50 MHz; see
3
V
© NXP B.V. 2011. All rights reserved.
G2-S
V
001aaa559
001aac196
AGC
BF1208
(1)
(2)
(3)
(4)
(5)
(6)
(V)
(V)
6
4
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