BLL6H0514LS-130 NXP Semiconductors, BLL6H0514LS-130 Datasheet - Page 6

• Manufacturer Part Number: BLL6H0514LS-130
• Description: 130 W LDMOS transistor intended for pulsed applications in the 0
• Manufacturer: NXP Semiconductors

NXP Semiconductors
8. Test information
BLL6H0514L-130_0514LS-130
Product data sheet
Fig 6.
Fig 7.
(1) f = 1.2 GHz
(2) f = 1.3 GHz
(3) f = 1.4 GHz
C1
C6
V
Load power as a function of input power; typical values
Printed-Circuit Board (PCB) material: Duroid 6006 with 
See
Component layout
DS
C2
= 50 V; I
Table 9
C3
All information provided in this document is subject to legal disclaimers.
C4
for list of components.
Dq
Rev. 2 — 13 September 2010
(W)
P
= 50 mA; t
C5
160
120
L
80
40
0
0
p
= 300 s;  = 10 %.
1
R1
2
(1)
(2)
(3)
BLL6H0514L(S)-130
3
r
= 6.15 and thickness = 0.64 mm.
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P
i
(W)
C8
4
LDMOS driver transistor
R2
C13
C9
© NXP B.V. 2010. All rights reserved.
C10
C11
C12
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