BLL6H0514LS-130 NXP Semiconductors, BLL6H0514LS-130 Datasheet - Page 2

130 W LDMOS transistor intended for pulsed applications in the 0

BLL6H0514LS-130

Manufacturer Part Number
BLL6H0514LS-130
Description
130 W LDMOS transistor intended for pulsed applications in the 0
Manufacturer
NXP Semiconductors
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
BLL6H0514LS-130
Manufacturer:
NXP
Quantity:
5 000
NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLL6H0514L-130_0514LS-130
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLL6H0514L-130 (SOT1135A)
1
2
3
BLL6H0514LS-130 (SOT1135B)
1
2
3
Type number
BLL6H0514L-130
BLL6H0514LS-130
Symbol
V
I
T
V
T
D
stg
j
DS
GS
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
drain
gate
source
drain
gate
source
Description
All information provided in this document is subject to legal disclaimers.
Package
Name Description
-
-
Rev. 2 — 13 September 2010
flanged ceramic package; 2 mounting holes; 2 leads
earless flanged ceramic package; 2 leads
Conditions
[1]
[1]
BLL6H0514L(S)-130
Simplified outline
1
2
1
2
LDMOS driver transistor
3
3
Graphic symbol
-
Min
-
0.5
-
65
© NXP B.V. 2010. All rights reserved.
2
2
Max
100
+13
18
+150
200
sym112
sym112
SOT1135A
Version
SOT1135B
1
3
1
3
2 of 13
Unit
V
V
A
C
C

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