BLL6H0514LS-130 NXP Semiconductors, BLL6H0514LS-130 Datasheet - Page 4

• Manufacturer Part Number: BLL6H0514LS-130
• Description: 130 W LDMOS transistor intended for pulsed applications in the 0
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Application information
BLL6H0514L-130_0514LS-130
Product data sheet
6.1 Ruggedness in class-AB operation
7.1 Impedance information
The BLL6H0514L-130 and BLL6H0514LS-130 are capable of withstanding a load
mismatch corresponding to VSWR = 5 : 1 through all phases under the following
conditions: V
 = 10 %.
Table 8.
f
MHz
1200
1300
1400
Fig 1.
Definition of transistor impedance
Typical impedance
DS
All information provided in this document is subject to legal disclaimers.
= 50 V; I
Rev. 2 — 13 September 2010
Dq
= 50 mA; P
Z

1.21  j3.44
1.56  j4.49
2.21  j4.86
S
gate
Z
L
S
= 130 W; f = 1.2 GHz to 1.4 GHz; t
001aaf059
BLL6H0514L(S)-130
Z
drain
L
Z

2.40  j0.63
2.30  j0.87
2.00  j1.71
L
LDMOS driver transistor
© NXP B.V. 2010. All rights reserved.
p
= 300 s;
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