BLF8G24LS-200P NXP Semiconductors, BLF8G24LS-200P Datasheet - Page 6

• Manufacturer Part Number: BLF8G24LS-200P
• Description: 200 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
9. Abbreviations
10. Revision history
Table 9.
BLF8G24L-200P_LS-200P
Objective data sheet
Document ID
BLF8G24L-200P_8G24LS-200P v.1.1
Revision history
Table 8.
Acronym
3GPP
CCDF
DPCH
CW
ESD
LDMOS
LDMOST
PAR
RF
VSWR
W-CDMA
Abbreviations
BLF8G24L-200P; BLF8G24LS-200P
All information provided in this document is subject to legal disclaimers.
Description
3rd Generation Partnership Project
Complementary Cumulative Distribution Function
Dedicated Physical Channel
Continuous Wave
ElectroStatic Discharge
Laterally Diffused Metal Oxide Semiconductor
Laterally Diffused Metal Oxide Semiconductor Transistor
Peak-to-Average power Ratio
Radio Frequency
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
Release date
20120220
Rev. 1.1 — 20 February 2012
Data sheet status
Objective data sheet
Change notice
-
Power LDMOS transistor
© NXP B.V. 2012. All rights reserved.
Supersedes
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