BLF8G24L-200P NXP Semiconductors, BLF8G24L-200P Datasheet
BLF8G24L-200P
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BLF8G24L-200P Summary of contents
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... BLF8G24L-200P; BLF8G24LS-200P Power LDMOS transistor Rev. 1.1 — 20 February 2012 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical RF performance at T Mode of operation 1-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 0.01 % probability on CCDF. ...
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... NXP Semiconductors 2. Pinning information Table 2. Pin BLF8G24L-200P (SOT539A BLF8G24LS-200P (SOT539B [1] Connected to flange. 3. Ordering information Table 3. Type number BLF8G24L-200P BLF8G24LS-200P 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol ...
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... D ACPR 5M 7.1 Ruggedness in class-AB operation The BLF8G24L-200P and BLF8G24LS-200P are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V BLF8G24L-200P_LS-200P Objective data sheet BLF8G24L-200P; BLF8G24LS-200P Thermal characteristics thermal resistance from junction to case Characteristics C per section, unless otherwise specified. ...
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... Note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw. OUTLINE VERSION IEC SOT539A Fig 1. Package outline SOT539A BLF8G24L-200P_LS-200P Objective data sheet BLF8G24L-200P; BLF8G24LS-200P ...
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... Note 1. millimeter dimensions are derived from the original inch dimensions. Outline version IEC SOT539B Fig 2. Package outline SOT539B BLF8G24L-200P_LS-200P Objective data sheet BLF8G24L-200P; BLF8G24LS-200P scale D ...
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... ESD LDMOS LDMOST PAR RF VSWR W-CDMA 10. Revision history Table 9. Revision history Document ID BLF8G24L-200P_8G24LS-200P v.1.1 BLF8G24L-200P_LS-200P Objective data sheet BLF8G24L-200P; BLF8G24LS-200P Abbreviations Description 3rd Generation Partnership Project Complementary Cumulative Distribution Function Dedicated Physical Channel Continuous Wave ElectroStatic Discharge Laterally Diffused Metal Oxide Semiconductor ...
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... This document supersedes and replaces all information supplied prior to the publication hereof. BLF8G24L-200P_LS-200P Objective data sheet BLF8G24L-200P; BLF8G24LS-200P [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...
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... For sales office addresses, please send an email to: BLF8G24L-200P_LS-200P Objective data sheet BLF8G24L-200P; BLF8G24LS-200P NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Power LDMOS transistor All rights reserved. Date of release: 20 February 2012 Document identifier: BLF8G24L-200P_LS-200P ...