BLF8G24LS-200P NXP Semiconductors, BLF8G24LS-200P Datasheet - Page 2

• Manufacturer Part Number: BLF8G24LS-200P
• Description: 200 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLF8G24L-200P_LS-200P
Objective data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLF8G24L-200P (SOT539A)
1
2
3
4
5
BLF8G24LS-200P (SOT539B)
1
2
3
4
5
Type number
BLF8G24L-200P
BLF8G24LS-200P
Symbol
V
V
I
T
T
D
stg
j
DS
GS
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Description
drain1
drain2
gate1
gate2
source
drain1
drain2
gate1
gate2
source
BLF8G24L-200P; BLF8G24LS-200P
All information provided in this document is subject to legal disclaimers.
Package
Name Description
-
-
Rev. 1.1 — 20 February 2012
flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads
earless flanged balanced LDMOST ceramic package;
4 leads
Conditions
[1]
[1]
Simplified outline
1
3
1
3
2
4
2
4
Power LDMOS transistor
5
5
Graphic symbol
Min
-
0.5
-
65
-
© NXP B.V. 2012. All rights reserved.
3
4
3
4
Max
68
+13
37
+150
200
Version
SOT539A
SOT539B
1
2
1
2
sym117
sym117
5
5
Unit
V
V
A
C
C
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