BLF8G24LS-200P NXP Semiconductors, BLF8G24LS-200P Datasheet - Page 3

• Manufacturer Part Number: BLF8G24LS-200P
• Description: 200 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
7. Test information
BLF8G24L-200P_LS-200P
Objective data sheet
7.1 Ruggedness in class-AB operation
Table 5.
Table 6.
T
Remark: All testing performed in a class-AB production test circuit.
Table 7.
Mode of operation: 1-carrier W-CDMA, PAR = 7.2 dB at 0.01 % probability on the CCDF, 3GPP test
model 1; 64 DPCH; f
T
The BLF8G24L-200P and BLF8G24LS-200P are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
Symbol Parameter
R
Symbol Parameter
V
V
I
I
I
g
R
Symbol
P
G
RL

ACPR
DSS
DSX
GSS
j
case
fs
D
(BR)DSS
GS(th)
L(AV)
th(j-c)
DS(on)
p
= 25
in
= 25
5M

C per section, unless otherwise specified.

drain-source breakdown voltage V
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance V
thermal resistance from junction to case
C; unless otherwise specified.
Thermal characteristics
Characteristics
Functional test information
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio (5 MHz)
DS
BLF8G24L-200P; BLF8G24LS-200P
All information provided in this document is subject to legal disclaimers.
= 28 V; I
1
= 2300 MHz; f
Rev. 1.1 — 20 February 2012
Dq
= 1400 mA; P
2
= 2400 MHz; RF performance at V
Conditions
V
I
V
V
V
V
V
I
D
D
L
GS
DS
GS
GS
DS
GS
DS
GS
= 100 mA
= 5.04 A
= 200 W (CW); f = 2300 MHz.
= 10 V;
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
GS(th)
GS(th)
Conditions
Conditions
T
D
case
DS
D
= 1 mA
+ 3.75 V;
+ 3.75 V;
DS
= 5.1 A
= 28 V
= 80 C; P
= 0 V
Power LDMOS transistor
L
Min
68
1.5
-
22.8
-
-
0.032 -
Min
-
<tbd> 16.5 -
-
<tbd> 30
-
DS
= 60 W
= 28 V; I
© NXP B.V. 2012. All rights reserved.
Typ
-
-
-
-
-
<tbd> -
Typ Max
60
10 -
38 <tbd> dBc
Dq
Typ
<tbd> K/W
-
-
Max
-
2.3
2.8
-
280
0.166 
= 1400 mA;
Unit
Unit
W
dB
dB
%
Unit
V
V
A
A
nA
S
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