BLF7G24LS-160P NXP Semiconductors, BLF7G24LS-160P Datasheet - Page 6
![160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz](/photos/41/53/415347/sot539b_3d_sml.gif)
BLF7G24LS-160P
Manufacturer Part Number
BLF7G24LS-160P
Description
160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz
Manufacturer
NXP Semiconductors
Datasheet
1.BLF7G24L-160P.pdf
(14 pages)
NXP Semiconductors
BLF7G24L-160P_7G24LS-160P
Objective data sheet
Fig 7.
5/
G%
(1) f = 2300 MHz
(2) f = 2350 MHz
(3) f = 2400 MHz
LQ
V
Input return loss as a function of output
power; typical values
DS
= 28 V; V
GS1
= 24 V; I
Dq1
= 1200 mA.
3
/
BLF7G24L-160P; BLF7G24LS-160P
G%P
All information provided in this document is subject to legal disclaimers.
DDD
Rev. 2 — 1 March 2012
$&35
Fig 8.
G%F
N
(1) f = 2300 MHz
(2) f = 2350 MHz
(3) f = 2400 MHz
V
Adjacent channel power ratio (1980 kHz) as a
function of output power; typical values
DS
= 28 V; V
GS1
= 24 V; I
Power LDMOS transistor
Dq1
= 1200 mA.
3
/
G%P
© NXP B.V. 2012. All rights reserved.
DDD
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