BLF7G24LS-160P NXP Semiconductors, BLF7G24LS-160P Datasheet - Page 5

• Manufacturer Part Number: BLF7G24LS-160P
• Description: 160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G24L-160P_7G24LS-160P
Objective data sheet
Fig 5.
G%
*
S
S S
(1) G
(2) G
(3) G
(4) 
(5) 
(6) 








V
Power gain and drain efficiency as function of
output power; typical values
DS
D
D
D
p
p
p
at f = 2300 MHz
at f = 2350 MHz
at f = 2400 MHz
at f = 2300 MHz
at f = 2350 MHz
at f = 2400 MHz
= 28 V; V
7.3.2 IS-95

GS1

= 24 V; I
Fig 4.






(1) f = 2300 MHz
(2) f = 2350 MHz
(3) f = 2400 MHz
Dq1

V
Input return loss as a function of output power; typical values
DS
= 1200 mA.
3
= 28 V; V
/
BLF7G24L-160P; BLF7G24LS-160P
G%P

All information provided in this document is subject to legal disclaimers.
DDD
5/
G%
GS1
LQ





= 24 V; I
Rev. 2 — 1 March 2012









'
Dq1

= 1200 mA;  = 10 %; t
Fig 6.



G%

*
S
S S
(1) G
(2) G
(3) G
(4) 
(5) 
(6) 








V
Power gain and drain efficiency as function of
output power; typical values

D
D
D
DS
p
p
p
at f = 2300 MHz
at f = 2350 MHz
at f = 2400 MHz
at f = 2300 MHz
at f = 2350 MHz
at f = 2400 MHz
= 28 V; V


3
p
/
= 0.10 ms.
GS1
G%P

DDD

= 24 V; I








Power LDMOS transistor
Dq1

= 1200 mA.
3
© NXP B.V. 2012. All rights reserved.
/

DDD
:








5 of 14
'