BLF7G24LS-140 NXP Semiconductors, BLF7G24LS-140 Datasheet

140 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz

BLF7G24LS-140

Manufacturer Part Number
BLF7G24LS-140
Description
140 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz
Manufacturer
NXP Semiconductors
Datasheet
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
140 W LDMOS power transistor for base station applications at frequencies from
2300 MHz to 2400 MHz.
Table 1.
Typical RF performance at T
[1]
[2]
Mode of operation
1 carrier W-CDMA
IS-95
BLF7G24L-140;
BLF7G24LS-140
Power LDMOS transistor
Rev. 3 — 1 August 2011
Excellent ruggedness
High efficiency
Low R
Designed for low memory effects providing excellent digital pre-distortion capability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
RF power amplifiers for base stations and multi carrier applications in the 2300 MHz to
2400 MHz frequency range
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is 3.84
MHz.
th
Typical performance
providing excellent thermal stability
f
(MHz)
2300 to 2400 1300
2300 to 2400 1300
case
= 25
I
(mA)
Dq
C in a common source class-AB production test circuit.
V
(V)
28
28
DS
P
(W)
30
50
L(AV)
G
(dB)
18.5
18.5
p
26.5 45
33
(%)
D
Product data sheet
ACPR
(dBc)
-
[1]
885k
ACPR
(dBc)
35
[2]
5M

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BLF7G24LS-140 Summary of contents

Page 1

... BLF7G24L-140; BLF7G24LS-140 Power LDMOS transistor Rev. 3 — 1 August 2011 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical RF performance at T Mode of operation IS-95 1 carrier W-CDMA [1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9 ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin BLF7G24L-140 (SOT502A BLF7G24LS-140 (SOT502B [1] Connected to flange. 3. Ordering information Table 3. Type number BLF7G24L-140 BLF7G24LS-140 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg Thermal characteristics Table 5 ...

Page 3

... L(AV  D ACPR 885k 7.1 Ruggedness in class-AB operation The BLF7G24L-140 and BLF7G24LS-140 are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions BLF7G24L-140_7G24LS-140 Product data sheet BLF7G24L-140; BLF7G24LS-140 Characteristics C unless otherwise specified. drain-source breakdown voltage ...

Page 4

... 1300 mA ( 2300 MHz ( 2400 MHz Fig 3. Single carrier IS-95 ACPR at 885 kHz as a function of load power; typical values BLF7G24L-140_7G24LS-140 Product data sheet BLF7G24L-140; BLF7G24LS-140 001aan523 ( 100 P (W) L Fig 2. 001aan525 APCR (dBc 100 P ...

Page 5

... 2300 MHz ( 2400 MHz Fig 5. Single carrier IS-95 peak-to-average power ratio as a function of load power; typical values BLF7G24L-140_7G24LS-140 Product data sheet BLF7G24L-140; BLF7G24LS-140 001aan527 100 P (W) L Fig 6. All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 August 2011 ...

Page 6

... 2300 MHz ( 2400 MHz Fig 7. Pulsed CW power gain as a function of load power; typical values BLF7G24L-140_7G24LS-140 Product data sheet BLF7G24L-140; BLF7G24LS-140 001aan529 120 160 200 P (W) L Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 3 — 1 August 2011 ...

Page 7

... 1300 mA ( 2300 MHz ( 2400 MHz Fig 11. Single carrier W-CDMA ACPR at 5 MHz as a function of load power; typical values BLF7G24L-140_7G24LS-140 Product data sheet BLF7G24L-140; BLF7G24LS-140 001aan531 (1) (2) 80 120 P (W) L Fig 10. Single carrier W-CDMA drain efficiency as a 001aan533 ...

Page 8

... 2300 MHz ( 2400 MHz Fig 13. Single carrier W-CDMA peak-to-average power ratio as a function of load power; typical values BLF7G24L-140_7G24LS-140 Product data sheet BLF7G24L-140; BLF7G24LS-140 001aan535 (1) (2) 80 120 P (W) L Fig 14. Single carrier W-CDMA peak output power as a All information provided in this document is subject to legal disclaimers. ...

Page 9

... DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) c UNIT 12.83 4.72 0.15 20.02 mm 12.57 3.43 0.08 19.61 0.505 0.186 0.006 0.788 inches 0.135 0.495 0.772 0.003 OUTLINE VERSION IEC SOT502A Fig 15. Package outline SOT502A BLF7G24L-140_7G24LS-140 Product data sheet BLF7G24L-140; BLF7G24LS-140 scale 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9.30 9 ...

Page 10

... DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) c UNIT 12.83 4.72 0.15 20.02 mm 12.57 3.43 0.08 19.61 0.186 0.505 0.788 0.006 inches 0.135 0.495 0.772 0.003 OUTLINE VERSION IEC SOT502B Fig 16. Package outline SOT502B BLF7G24L-140_7G24LS-140 Product data sheet BLF7G24L-140; BLF7G24LS-140 scale 19.96 9.50 9.53 1.14 19.94 5.33 19.66 9 ...

Page 11

... Revision history Table 9. Revision history Document ID BLF7G24L-140_7G24LS-140 v.3 Modifications: BLF7G24L-140_7G24LS-140 v.2 BLF7G24L-140_7G24LS-140 v.1 BLF7G24L-140_7G24LS-140 Product data sheet BLF7G24L-140; BLF7G24LS-140 Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Continuous Wave Dedicated Physical CHannel Interim Standard 95 ElectroStatic Discharge Laterally Diffused Metal Oxide Semiconductor Laterally Diffused Metal Oxide Semiconductor Transistor ...

Page 12

... BLF7G24L-140_7G24LS-140 Product data sheet BLF7G24L-140; BLF7G24LS-140 [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...

Page 13

... For sales office addresses, please send an email to: BLF7G24L-140_7G24LS-140 Product data sheet BLF7G24L-140; BLF7G24LS-140 NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 14

... Trademarks Contact information Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 BLF7G24L-140; BLF7G24LS-140 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Power LDMOS transistor All rights reserved ...

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