BLF7G24LS-160P NXP Semiconductors, BLF7G24LS-160P Datasheet - Page 4

• Manufacturer Part Number: BLF7G24LS-160P
• Description: 160 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G24L-160P_7G24LS-160P
Objective data sheet
Fig 2.
G%
*
S
S S
(1) G
(2) G
(3) G
(4) 
(5) 
(6) 








V
t
Power gain and drain efficiency as function of
output power; typical values
p
DS
D
D
D
p
p
p
= 0.10 ms.
at f = 2300 MHz
at f = 2350 MHz
at f = 2400 MHz
at f = 2300 MHz
at f = 2350 MHz
at f = 2400 MHz
= 28 V; V
7.3.1 Pulsed CW

7.2 Impedance information
7.3 Graphs
GS1







Table 8.
Measured load-pull data. Typical values per section.
I
f
(MHz)
2300
2400
Dq
= 24 V; I
Fig 1.
= 600 mA; main transistor V

Dq1
Definition of transistor impedance

Typical impedance
= 1200 mA;  = 10 %;
3
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BLF7G24L-160P; BLF7G24LS-160P
G%P
All information provided in this document is subject to legal disclaimers.
DDD

Z
()
2.5  j5.9
4.6  j7.2

S
Rev. 2 — 1 March 2012







'
DS
= 28 V. Z
Fig 3.
gate
G%
Z
*
S
S
S S
S
(1) G
(2) G
(3) G
(4) 
(5) 
(6) 
and Z








V
t
Power gain and drain efficiency as function of
output power; typical values
p
D
D
D
DS
p
p
p
= 0.10 ms.
at f = 2300 MHz
at f = 2350 MHz
at f = 2400 MHz
at f = 2300 MHz
at f = 2350 MHz
at f = 2400 MHz
L
= 28 V; V
001aaf059
defined in
Z

drain
L
GS1
Figure

= 24 V; I
Z
()
3.1  j4.3
2.9  j4.2
L






Power LDMOS transistor
1.

Dq1
= 1200 mA;  = 10 %;
3
© NXP B.V. 2012. All rights reserved.

/
DDD
:








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