BLF7G22L-250P NXP Semiconductors, BLF7G22L-250P Datasheet - Page 8

• Manufacturer Part Number: BLF7G22L-250P
• Description: 250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLF7G22L-250P_22LS-250P
Product data sheet
Fig 11. Component layout
See
Table 9
7.6 Test circuit
for list of components.
Table 9.
See
[1]
[2]
[3]
Component
C2
C1, C3, C4, C5, C6
C7, C8
C9, C12
C10
C11
R1
R2, R4
R3
American Technical Ceramics type 100A or capacitor of same quality.
American Technical Ceramics type 100B or capacitor of same quality.
TDK or capacitor of same quality.
Figure 11
C2
List of components
R1
for component layout.
BLF7G22L-250P; BLF7G22LS-250P
C1
All information provided in this document is subject to legal disclaimers.
C12
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
chip resistor
chip resistor
chip resistor
Rev. 2 — 28 October 2011
R3
R2
R4
C4
C8 C9
C6
C5
C7
C10
Value
8.2 pF
8.2 pF
470 nF
4.7 F
470 F
4.7 
10 
33 
10 F
C11
Power LDMOS transistor
aaa-001327
© NXP B.V. 2011. All rights reserved.
[1]
[2]
[3]
[3]
[3]
Remarks
ATC100A
ATC100B
TDK
TDK
TDK
Philips 0603
Philips 0603
Philips 0603
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