BLF7G22L-250P NXP Semiconductors, BLF7G22L-250P Datasheet - Page 11

• Manufacturer Part Number: BLF7G22L-250P
• Description: 250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
9. Handling information
10. Abbreviations
11. Revision history
Table 11.
BLF7G22L-250P_22LS-250P
Product data sheet
CAUTION
Document ID
BLF7G22L-250P_22LS-250P v.2
Modifications:
BLF7G22L-250P_22LS-250P v.1
Revision history
Table 10.
Acronym
3GPP
CCDF
CW
DPCH
LDMOS
LDMOST
PAR
RF
VSWR
W-CDMA
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Release date
20111028
20100506
Abbreviations
•
•
•
•
•
•
BLF7G22L-250P; BLF7G22LS-250P
The status of this document has been changed to Product data sheet
Table 1 on page
have been changed
Table 7 on page
have been changed
Section 7.2 on page
Section 7.6 on page
Section 9 on page
Description
Third Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Wave
Dedicated Physical CHannel
Laterally Diffused Metal Oxide Semiconductor
Laterally Diffused Metal Oxide Semiconductor Transistor
Peak-to-Average power Ratio
Radio Frequency
Voltage Standing Wave Ratio
Wideband Code Division Multiple Access
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 28 October 2011
Data sheet status
Product data sheet
Objective data sheet
1: the term PDPCH has been changed to DPCH; several values
3: the term PDPCH has been changed to DPCH; several values
11: section has been added
4: section has been added
8: section has been added
Change notice
-
-
Power LDMOS transistor
Supersedes
BLF7G22L-250P_22LS-
250P v.1
-
© NXP B.V. 2011. All rights reserved.
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