BLF7G22L-250P NXP Semiconductors, BLF7G22L-250P Datasheet - Page 3

• Manufacturer Part Number: BLF7G22L-250P
• Description: 250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
7. Test information
BLF7G22L-250P_22LS-250P
Product data sheet
7.1 Ruggedness in class-AB operation
Table 5.
Table 6.
T
Table 7.
Mode of operation: 2-carrier W-CDMA; PAR = 8.4 dB at 0.01 % probability on the CCDF; 3GPP test
model 1; 1-64 DPCH; f
RF performance at V
class-AB production test circuit.
The BLF7G22L-250P and BLF7G22LS-250P are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
Symbol Parameter
R
Symbol Parameter
V
V
I
I
I
g
R
Symbol
P
G
RL

ACPR
DSS
DSX
GSS
j
fs
D
(BR)DSS
GS(th)
L(AV)
th(j-c)
DS(on)
p
= 25
in

C unless otherwise specified.
thermal resistance from junction to case T
drain-source breakdown voltage V
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance V
Thermal characteristics
Characteristics
Functional test information
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio
DS
BLF7G22L-250P; BLF7G22LS-250P
All information provided in this document is subject to legal disclaimers.
= 30 V; I
DS
1
= 28 V; I
= 2112.5 MHz; f
Rev. 2 — 28 October 2011
Dq
= 1900 mA; P
Dq
= 1900 mA; T
2
= 2117.5 MHz; f
Conditions
V
V
V
V
V
V
I
D
L
GS
DS
GS
GS
DS
GS
DS
GS
= 6.3 A
= 250 W (CW); f = 2110 MHz to 2170 MHz.
case
= 0 V; I
= 10 V; I
= 0 V; V
= V
= 10 V
= 11 V; V
= 10 V; I
= V
Conditions
P
P
P
P
L(AV)
L(AV)
L(AV)
L(AV)
Conditions
V
GS(th)
GS(th)
= 25
case
DS
= 70 W
= 70 W
= 70 W
= 70 W
D
= 28 V; I
DS
D
D
3
= 80 C; P
= 1.8 mA
+ 3.75 V;
DS
+ 3.75 V;

C; unless otherwise specified; in a
= 180 mA
= 9 A
= 2162.5 MHz; f
= 28 V
= 0 V
Dq
= 1900 mA
L
= 70 W;
Min
-
17
-
27
-
Power LDMOS transistor
Min
65
1.5
-
28
-
-
-
4
Typ
70
18.5
15
31
30
= 2167.5 MHz;
© NXP B.V. 2011. All rights reserved.
Typ
-
1.9
-
34.2
-
13.7
0.081 -
Max
-
-
5
-
25
Typ
0.20
Max
-
2.3
2.8
-
280
-
W
Unit
dB
dB
%
dBc
3 of 14
Unit
K/W
Unit
V
V
A
A
nA
S
