BLF245B NXP Semiconductors, BLF245B Datasheet - Page 5

• Manufacturer Part Number: BLF245B
• Description: Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range
• Manufacturer: NXP Semiconductors

Philips Semiconductors
2003 Aug 04
handbook, halfpage
handbook, halfpage
R DSon
VHF push-pull power MOS transistor
(mV/K)
V
Fig.4
I
Fig.6
( )
D
T.C.
DS
= 0.75 A; V
= 10 V.
2
0
2
4
6
8
2
1
0
0
1
Temperature coefficient of gate-source
voltage as a function of drain current; typical
values per section.
Drain-source on-state resistance as a
function of junction temperature; typical
values per section.
GS
= 10 V.
40
10
80
10
2
120
I D (mA)
T j ( C)
MGP182
MGP180
10
160
3
5
handbook, halfpage
handbook, halfpage
V
Fig.5
V
Fig.7
DS
GS
(pF)
C
(A)
160
120
I D
= 10 V.
= 0; f = 1 MHz.
80
40
6
4
2
0
0
0
0
Drain current as a function of gate-source
voltage; typical values per section.
Input and output capacitance as functions
of drain-source voltage; typical values per
section.
10
4
20
8
T j = 25 C
C os
C is
125 C
Product specification
12
30
V GS (V)
V DS (V)
BLF245B
MGP181
MGP183
16
40