BLF245B NXP Semiconductors, BLF245B Datasheet - Page 4

• Manufacturer Part Number: BLF245B
• Description: Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range
• Manufacturer: NXP Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
V
2003 Aug 04
Per transistor section
V
I
I
V
g
R
I
C
C
C
j
DSS
GSS
DSX
GS
fs
(BR)DSS
GSth
= 25 C unless otherwise specified.
DSon
is
os
rs
VHF push-pull power MOS transistor
SYMBOL
group indicator
GROUP
M
C
D
G
H
N
A
B
E
F
K
J
L
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
PARAMETER
MIN.
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
LIMITS
(V)
MAX.
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
I
V
I
I
I
V
V
V
V
D
D
D
D
V
GS
GS
GS
GS
GS
= 5 mA; V
= 5 mA; V
= 0.75 A; V
= 0.75 A; V
GS
= 0; V
= 10 V; V
= 0; V
= 0; V
= 0; V
= 20 V; V
4
CONDITIONS
DS
DS
DS
DS
GROUP
GS
DS
= 28 V
= 28 V; f = 1 MHz
= 28 V; f = 1 MHz
= 28 V; f = 1 MHz
DS
GS
DS
DS
W
= 10 V
O
Q
R
U
= 0
P
S
T
V
X
Y
Z
= 10 V
= 10 V
= 10 V
= 0
MIN.
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
65
2
600
MIN.
LIMITS
850
0.8
5
60
40
4.5
TYP. MAX.
(V)
Product specification
BLF245B
1
1
4.5
1.5
MAX.
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
V
mA
V
mS
A
pF
pF
pF
UNIT
A