BLF245B NXP Semiconductors, BLF245B Datasheet - Page 10

• Manufacturer Part Number: BLF245B
• Description: Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range
• Manufacturer: NXP Semiconductors

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Philips Semiconductors
2003 Aug 04
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VHF push-pull power MOS transistor
The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being fully
metallized to serve as a ground. Earth connections are made by means of copper straps and hollow rivets for a
direct contact between the upper and lower sheets.
copper
copper
strap
strap
L1 + L2
rivet
L3
C1
C2
Fig.12 Component layout for 175 MHz test circuit.
C3
C4
L4
L5
C5
C6
rivet
rivet
L6
L7
copper
copper
strap
strap
C27
R2
C10
V G
R1
C7
C8
C9
V G
200 mm
L8
L9
10
copper
copper
C15
C16
strap
strap
L12
L13
C14
C17
L17
L10
L16
L11
L14
C21
C22
L15
V D
R7
R8
V D
C19
C11
C13
C18
L18
L19
C12
C20
rivet
rivet
C23
C24
C26
C25
L21 + L22
rivet
L20
copper
copper
strap
strap
MBA377
MBA378
Product specification
110 mm
BLF245B