BLF245B NXP Semiconductors, BLF245B Datasheet - Page 3

• Manufacturer Part Number: BLF245B
• Description: Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range
• Manufacturer: NXP Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
THERMAL CHARACTERISTICS
2003 Aug 04
Per transistor section unless otherwise specified
V
I
P
T
T
R
R
handbook, halfpage
SYMBOL
D
SYMBOL
V
stg
j
DS
tot
th j-mb
th mb-h
VHF push-pull power MOS transistor
(1) Current in this area may be limited by R
(2) T
Total device; both sections equally loaded.
GS
10
10
(A)
I D
10
mb
1
2
1
1
= 25 C.
drain-source voltage
gate-source voltage
DC drain current
total power dissipation
storage temperature
junction temperature
(1)
thermal resistance from
junction to mounting base
thermal resistance from
mounting base to heatsink
PARAMETER
Fig.2 DC SOAR.
PARAMETER
10
V DS (V)
DSon
T
mb
(2)
.
total device; both sections equally loaded
total device; both sections equally loaded
MRA922
25 C; total device; both sections equally loaded
10
2
CONDITIONS
3
CONDITIONS
handbook, halfpage
(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.
P tot
(W)
120
80
40
0
0
Fig.3 Power derating curves.
40
(1)
(2)
80
MIN.
65
VALUE
Product specification
2.3
0.3
120
T h (
BLF245B
65
20
4.5
75
+150
200
MAX.
MRA929
o
C)
160
UNIT
K/W
K/W
V
V
A
W
UNIT
C
C