PSMN8R0-30YLC NXP Semiconductors, PSMN8R0-30YLC Datasheet - Page 8

Logic level enhancement mode N-channel MOSFET in LFPAK package

PSMN8R0-30YLC

Manufacturer Part Number
PSMN8R0-30YLC
Description
Logic level enhancement mode N-channel MOSFET in LFPAK package
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
PSMN8R0-30YLC
Product data sheet
Fig 8.
Fig 10. Sub-threshold drain current as a function of
(A)
I
(S )
g
10
D
10
10
10
10
10
fs
80
60
40
20
-1
-2
-3
-4
-5
-6
0
drain current; typical values
gate-source voltage
Forward transconductance as a function of
0
0
20
Min
1
N-channel 30 V 7.9 mΩ logic level MOSFET in LFPAK using NextPower technology
40
Typ
Max
2
60
V
All information provided in this document is subject to legal disclaimers.
GS
003a a g156
003a a g158
I
D
(V)
(A)
Rev. 2 — 1 September 2011
80
3
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
(A)
GS (th)
I
(V)
D
80
60
40
20
0
3
2
1
0
-60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics; drain current as a
0
Max (1mA)
Min (5mA)
0
1
T
PSMN8R0-30YLC
j
= 150 C
I
D
=5mA
60
2
1mA
T
j
= 25 C
120
3
© NXP B.V. 2011. All rights reserved.
V
003a a g157
003a a g159
T
GS
j
(C)
(V)
180
4
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