PSMN8R0-30YLC NXP Semiconductors, PSMN8R0-30YLC Datasheet - Page 7

• Manufacturer Part Number: PSMN8R0-30YLC
• Description: Logic level enhancement mode N-channel MOSFET in LFPAK package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
PSMN8R0-30YLC
Product data sheet
Symbol
t
t
t
t
Q
Source-drain diode
V
t
Q
t
t
d(on)
r
d(off)
f
rr
a
b
Fig 6.
SD
oss
r
(A)
I
D
80
60
40
20
0
function of drain-source voltage; typical values
Output characteristics; drain current as a
0
Characteristics
10
4.5
Parameter
turn-on delay time
rise time
turn-off delay time
fall time
output charge
source-drain voltage
reverse recovery time
recovered charge
reverse recovery rise
time
reverse recovery fall
time
1
3.5
N-channel 30 V 7.9 mΩ logic level MOSFET in LFPAK using NextPower technology
…continued
2
3
V
Conditions
V
R
V
T
I
see
I
V
V
V
GS
All information provided in this document is subject to legal disclaimers.
S
S
j
DS
GS
DS
GS
DS
003a a g154
G(ext)
V
= 25 °C
= 15 A; V
= 15 A; dI
(V) =
DS
Figure 17
= 15 V; R
= 15 V
= 15 V; see
= 0 V; V
= 0 V; I
(V)
2.8
2.6
2.4
3.0
2.2
= 4.7 Ω
Rev. 2 — 1 September 2011
4
S
GS
S
DS
/dt = -100 A/µs; V
= 15 A; dI
L
= 0 V; T
= 1 Ω; V
= 15 V; f = 1 MHz;
Figure 18
Fig 7.
j
S
= 25 °C;
GS
/dt = -100 A/µs;
R
(m)
DS on
= 4.5 V;
20
16
12
8
4
0
of gate-source voltage; typical values
Drain-source on-state resistance as a function
GS
0
= 0 V;
4
PSMN8R0-30YLC
Min
-
-
-
-
-
-
-
-
-
-
8
Typ
15
11
19
7
5
0.85
21
13
12
9
12
© NXP B.V. 2011. All rights reserved.
003a a g155
V
GS
-
Max
-
-
-
-
1.1
-
-
-
-
(V)
16
Unit
ns
ns
ns
ns
nC
V
ns
nC
ns
ns
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