PSMN8R0-40BS NXP Semiconductors, PSMN8R0-40BS Datasheet

PSMN8R0-40BS

Manufacturer Part Number
PSMN8R0-40BS
Description
Manufacturer
NXP Semiconductors
Datasheet
1. Product profile
Table 1.
Symbol
V
I
P
Static characteristics
R
Dynamic characteristics
Q
Q
Avalanche ruggedness
E
D
DS
tot
DS(AL)S
DSon
GD
G(tot)
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
gate-drain charge
total gate charge
non-repetitive
drain-source
avalanche energy
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
PSMN8R0-40BS
N-channel 40 V 7.6 mΩ standard level MOSFET in D2PAK
Rev. 2 — 2 March 2012
High efficiency due to low switching
and conduction losses
DC-to-DC convertors
Load switching
Conditions
T
T
T
V
see
V
see
V
V
j
mb
mb
GS
GS
GS
sup
≥ 25 °C; T
Figure 13
Figure
= 25 °C; V
= 25 °C; see
= 10 V; I
= 10 V; I
= 10 V; T
≤ 40 V; unclamped; R
14; see
j
D
D
≤ 175 °C
j(init)
GS
= 25 A; T
= 25 A; V
Figure 2
= 10 V; see
= 25 °C; I
Figure 15
j
DS
= 25 °C;
GS
= 20 V;
D
= 77 A;
= 50 Ω
Figure 1
Suitable for standard level gate drive
sources
Motor control
Server power supplies
Min
-
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
6.2
3.8
21
-
Max
40
77
86
7.6
-
-
43
Unit
V
A
W
mΩ
nC
nC
mJ

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PSMN8R0-40BS Summary of contents

Page 1

... PSMN8R0-40BS N-channel 40 V 7.6 mΩ standard level MOSFET in D2PAK Rev. 2 — 2 March 2012 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  ...

Page 2

... T pulsed ° ° j(init) ≤ unclamped sup All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN8R0-40BS Graphic symbol mbb076 Version SOT404 Min Max - kΩ -20 ...

Page 3

... T (°C) mb Fig 2. Limit DSon All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN8R0-40BS 100 150 Normalized total power dissipation as a function of mounting base temperature 10 μs 100 μ 100 © NXP B.V. 2012. All rights reserved. ...

Page 4

... PSMN8R0-40BS Product data sheet N-channel 40 V 7.6 mΩ standard level MOSFET in D2PAK Conditions see Figure 4 minimum footprint; mounted on a printed circuit board - All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN8R0-40BS Min Typ Max - 1.2 1. 003aad068 δ ...

Page 5

... MHz °C; see Figure 0.5 Ω 4.7 Ω R G(ext) All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN8R0-40BS Min Typ Max Unit 4 ...

Page 6

... DS j 003aad058 7 6 5.5 5 4 (V) DS Fig 6. 003aad064 (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN8R0-40BS Min Typ - 0. 100 °C = 175 ° ...

Page 7

... V ( Fig 10. Sub-threshold drain current as a function of 003aad280 a 120 180 T (°C) j Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN8R0-40BS −1 min typ −2 −3 −4 −5 − gate-source voltage 2 1 ...

Page 8

... I (A) D Fig 14. Gate charge waveform definitions 003aad062 (nC) G Fig 16. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN8R0-40BS GS(pl) V GS(th GS1 GS2 ...

Page 9

... Product data sheet N-channel 40 V 7.6 mΩ standard level MOSFET in D2PAK 100 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN8R0-40BS 003aad061 = 25 ° 0.9 1.2 V (V) SD © NXP B.V. 2012. All rights reserved ...

Page 10

... max. 1.60 10.30 2.90 11 2.54 1.20 9.70 2.10 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN8R0-40BS mounting base 15.80 2.60 14.80 2.20 EUROPEAN PROJECTION SOT404 ISSUE DATE 05-02-11 06-03-16 © NXP B.V. 2012. All rights reserved ...

Page 11

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN8R0-40BS v.2 20120302 • Modifications: Status changed from objective to product. • Various changes to content. PSMN8R0-40BS v.1 20111021 PSMN8R0-40BS Product data sheet N-channel 40 V 7.6 mΩ standard level MOSFET in D2PAK Data sheet status Change notice ...

Page 12

... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN8R0-40BS © NXP B.V. 2012. All rights reserved ...

Page 13

... Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMediaand UCODE— are trademarks of NXP B.V. HD RadioandHD Radiologo — are trademarks of iBiquity Digital Corporation. to:salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 2 March 2012 PSMN8R0-40BS © NXP B.V. 2012. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 2 March 2012 Document identifier: PSMN8R0-40BS ...

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