PSMN8R0-30YLC NXP Semiconductors, PSMN8R0-30YLC Datasheet
PSMN8R0-30YLC
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PSMN8R0-30YLC Summary of contents
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... PSMN8R0-30YLC N-channel 30 V 7.9 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 2 — 1 September 2011 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment ...
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... see DS see Figure 15 Simplified outline SOT669 (LFPAK; Power-SO8) Description plastic single-ended surface-mounted package; 4 leads All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2011 PSMN8R0-30YLC Min Typ = 2.3 D Figure 14 Figure 14; Graphic symbol ...
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... P der (%) 150 200 ( Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2011 PSMN8R0-30YLC Min - = 20 kΩ - -20 Figure 1 - Figure ° -55 -55 - 190 - = 25 ° ...
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... Limit All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2011 PSMN8R0-30YLC 003aag151 (ms) AL =10 100 100 (V) DS © NXP B.V. 2011. All rights reserved. ...
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... Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN8R0-30YLC Product data sheet Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2011 PSMN8R0-30YLC Min Typ Max - 3.38 3.61 003a a g153 t p ...
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... Figure see Figure D DS see Figure MHz °C; see Figure 16 j All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2011 PSMN8R0-30YLC Min Typ Max 1.05 1.59 1. ...
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... (m) 16 3 2.8 8 2.6 4 2 Fig 7. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2011 PSMN8R0-30YLC Min Typ Max - 0.85 1 ...
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... D Fig 9. 003a a g158 V GS (th) (V) Max (V) GS Fig 11. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2011 PSMN8R0-30YLC 150 Transfer characteristics; drain current as a function of gate-source voltage ...
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... (A) D Fig 13. Normalized drain-source on-state resistance 003aaa508 Fig 15. Gate-source voltage as a function of gate All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2011 PSMN8R0-30YLC 2 4.5V a 1.5 1 0 factor as a function of junction temperature 24V ...
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... (V) DS Fig 17. Source current as a function of source-drain All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2011 PSMN8R0-30YLC 150 0.3 0.6 0.9 voltage; typical values 003a a f 444 ...
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... A 0 2.5 scale max 4.41 2.2 0.9 0.25 0.30 4.10 4.20 3.62 2.0 0.7 0.19 0.24 3.80 REFERENCES JEDEC JEITA MO-235 All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2011 PSMN8R0-30YLC detail (1) (1) ( 5.0 3.3 6.2 0.85 1.3 1.27 4.8 3.1 5.8 0.40 0.8 EUROPEAN PROJECTION ...
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... NXP Semiconductors N-channel 30 V 7.9 mΩ logic level MOSFET in LFPAK using NextPower technology 8. Revision history Table 7. Revision history Document ID Release date PSMN8R0-30YLC v.2 20110901 • Modifications: Data sheet status changed from objective to product. PSMN8R0-30YLC v.1 20110712 PSMN8R0-30YLC Product data sheet Data sheet status Change notice ...
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... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2011 PSMN8R0-30YLC © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 1 September 2011 PSMN8R0-30YLC Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: PSMN8R0-30YLC All rights reserved. Date of release: 1 September 2011 ...